Plasma characterization of a plasma doping system for semiconductor device fabrication

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 504-507

  Koo, Bon Woong ^a   Fang, Ziwei ^a   Felch, Susan ^a  

^a Varian Semiconductor Equipment Associates Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON IONS; BULK PLASMA; DOPANT SPECIES; ENERGY ANALYZER; ION ENERGY DISTRIBUTIONS; ION MASS; ION SPECIES; LANGMUIR PROBE MEASUREMENTS; NEGATIVE POTENTIAL; PLASMA CHARACTERIZATION; PLASMA CONDITIONS; PLASMA DOPING; PRIMARY ELECTRONS; PULSED PLASMA; PULSED PLASMA DOPING; SEMICONDUCTOR DEVICE FABRICATION; SOURCE GAS; TIME-RESOLVED;

BORON; BORON COMPOUNDS; ELECTRON TEMPERATURE; ION IMPLANTATION; LANGMUIR PROBES; PLASMA DENSITY; PLASMA THEORY; PROBES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

SILICON WAFERS;

EID: 4344573539     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924198     Document Type: Conference Paper

References (5)

1. Technology Roadmap for Semiconductors, San Jose: Semiconductor Industry Association, 1999.
2. T. Sheng, SJB. Feich, and C.B. Cooper, "Characteristics of a Plasma Doping System for Semiconductor Device Fabrication," J. Vac Sei Technol., 1994, B 12(2), p. 969.
3. N, Hcrshkowttz, "Plasma Diagnostics, " Edited by Orlando Auciello and Daniel L. Flamm, Academic Press, NewYoik, 1989, p. 113.
4. S.C. Brown, "Basic Data of Plasma Physics, (The Fundamental Data on Electrical Discharges in Gases)," American Institute of Physics, New York, 1994, p. 1.
5. B. Chapman, "Glow Discharge Processes," John Wiley & Sons, Inc., New York, 1980, p. 115.