Bilayer graphene vertical tunneling field effect transistor

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 73-74

  Reddy, Dharmendar ^a   Register, Leonard F ^a   Banerjee, Sanjay K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; DIGITAL LOGIC CIRCUIT; ELECTRONIC DEVICE; GRAPHENE LAYERS; HIGH-SPEED ELECTRONICS; IV CHARACTERISTICS; MANY-BODY; NEGATIVE DIFFERENTIAL RESISTANCES; NON-EQUILIBRIUM GREEN'S FUNCTION; NONRESONANT; PSEUDOSPIN; ROOM TEMPERATURE; SINGLE ELECTRON; SINGLE-PARTICLE; SINGLE-PARTICLE TUNNELING; SUPERFLUID STATE; TIGHT BINDING; TUNNEL BARRIER; TUNNELING FIELD-EFFECT TRANSISTORS; TUNNELING HAMILTONIAN; ULTRA-LOW-VOLTAGE;

DIGITAL DEVICES; HAMILTONIANS; LOGIC CIRCUITS;

GRAPHENE;

EID: 84866907077     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6256932     Document Type: Conference Paper

References (5)

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