High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a-plane sapphire at low temperature

Nanoscale Research Letters

Volumn 10, Issue 1, 2015, Pages 1-10

  Jayah, Nurul Azzyaty ^a   Yahaya, Hafizal ^a   Mahmood, Mohamad Rusop ^b   Terasako, Tomoaki ^c   Yasui, Kanji ^d   Hashim, Abdul Manaf ^a  

^a MALAYSIA JAPAN INTERNATIONAL INSTITUTE OF TECHNOLOGY   (Malaysia)

^b UNIVERSITI TEKNOLOGI MARA   (Malaysia)

^c EHIME UNIVERSITY   (Japan)

^d NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Carrier concentration; Hydrothermal deposition; Mobility; Seed layer; Zinc oxide

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; II-VI SEMICONDUCTORS; MOLAR CONCENTRATION; OXIDE FILMS; SAPPHIRE; TEMPERATURE; THICK FILMS; THIN FILMS; ZINC OXIDE;

CHEMICAL VAPOR DEPOSITIONS (CVD); HIGH ELECTRON MOBILITY; HYDROTHERMAL DEPOSITION; HYDROTHERMAL FILMS; PHOTOLUMINESCENCE SPECTRUM; SEED LAYER; VERTICALLY ALIGNED; VISIBLE EMISSIONS;

CARRIER MOBILITY;

EID: 84961289671     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/s11671-014-0715-0     Document Type: Article

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