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Volumn 645, Issue , 2013, Pages 64-67

Effect of N and P codoping on ZnO properties

(7) Wang, Jinzhong a Elamurugu, Elangovan b Li, Hongtao a Jiao, Shujie a Zhao, Liancheng a Martins, Rodrigo a Fortunato, Elvira a

a HARBIN INSTITUTE OF TECHNOLOGY (China)

b Center of Excellence in Microelectronics Optoelectronics and Processes (Portugal)

Author keywords

Codoping; Photoluminescence; SEM; XPS; ZnO

Indexed keywords

ATOMIC RATIO; CHEMICAL COMPOSITIONS; CO-DOPED; CO-DOPED ZNO; CO-DOPING; CO-EXISTENCE; CORNING GLASS; DIFFRACTION SPECTRA; DOPED FILMS; DOPED ZNO; EMISSION PEAKS; P-DOPED ZNO; PHOTOLUMINESCENCE SPECTRUM; PREFERRED ORIENTATIONS; RELATIVE INTENSITY; SCANNING ELECTRON MICROSCOPE; X-RAY PHOTOELECTRON SPECTROSCOPY SPECTRA; ZINC OXIDE (ZNO); ZNO; ZNO STRUCTURES;

DOPING (ADDITIVES); INTELLIGENT SYSTEMS; PHOSPHORUS; PHOTOELECTRONS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC OXIDE;

EID: 84873835970 PISSN: 10226680 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/AMR.645.64 Document Type: Conference Paper

Times cited : (4)

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