High electron mobility Zn polar ZnMgO/ZnO heterostructures grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 358-361

  Tampo, H ^a   Matsubara, K ^a   Yamada, A ^a   Shibata, H ^a   Fons, P ^a   Yamagata, M ^b   Kanie, H ^b   Niki, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. Crystallographic polarity; A1. Heterostructure; A1. Two dimensional electron gas (2DEG); A3. molecular beam epitaxy; B1. ZnMgO; B1. ZnO

Indexed keywords

CRYSTAL GROWTH; ELECTRON GAS; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLOGRAPHIC POLARITY; HALL MEASUREMENTS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

HETEROJUNCTIONS;

EID: 33947329787     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.169     Document Type: Article

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