Effect of seed annealing temperature and growth duration on hydrothermal ZnO nanorod structures and their electrical characteristics

Applied Surface Science

Volumn 283, Issue , 2013, Pages 629-635

  Wahid, Khairul Anuar ^a,b   Lee, Wai Yee ^a   Lee, Hing Wah ^a   Teh, Aun Shin ^a   Bien, Daniel C S ^a   Azid, Ishak Abd ^b  

^a MIMOS Berhad   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Annealing temperature; Electrical resistivity; Seed layer; Surface morphology

Indexed keywords

ASPECT RATIO; ELECTRIC CONDUCTIVITY; II-VI SEMICONDUCTORS; MORPHOLOGY; NANORODS; SILICON OXIDES; SILICON WAFERS; SURFACE MORPHOLOGY; ZINC OXIDE;

ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; GROWTH ORIENTATIONS; MORPHOLOGY AND SIZE; OXIDIZED SILICON; PROCESS CONDITION; SEED LAYER; ZINC OXIDE (ZNO) NANOSTRUCTURES;

ANNEALING;

EID: 84883165414     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.06.159     Document Type: Article

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