Fabrication of p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors via thermal oxidation and hydrothermal growth processes

Journal of Materials Science: Materials in Electronics

Volumn 27, Issue 3, 2016, Pages 2342-2348

  Luo, Yingmin ^a   Yin, Bing ^a   Zhang, Heqiu ^a   Qiu, Yu ^a   Lei, Jixue ^a   Chang, Yue ^a   Zhao, Yu ^a   Ji, Jiuyu ^b   Hu, Lizhong ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b LIAONING SHIHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DEFECTS; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; HETEROJUNCTIONS; PHOTODETECTORS; PHOTONS; SCANNING ELECTRON MICROSCOPY; SPECTRUM ANALYSIS; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

ENERGY DISPERSIVE X RAY SPECTROSCOPY; HETEROJUNCTION DEVICES; HYDROTHERMAL GROWTH; OXIDATION TEMPERATURE; PHOTORESPONSE CHARACTERISTICS; THERMAL OXIDATION; ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTORS;

OXIDATION;

EID: 84957841330     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-015-4031-y     Document Type: Article

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