UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process

Journal of Alloys and Compounds

Volumn 632, Issue , 2015, Pages 165-171

  Echresh, Ahmad ^a,b   Chey, Chan Oeurn ^a   Zargar Shoushtari, Morteza ^b   Khranovskyy, Volodymyr ^a   Nur, Omer ^a   Willander, Magnus ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SHAHID CHAMRAN UNIVERSITY OF AHVAZ   (Iran)

Author keywords

Heterojunction; NiO thin film; UV photo detector; ZnO nanorods

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC RECTIFIERS; FABRICATION; NANORODS; PHOTODETECTORS; SEMICONDUCTOR DIODES; THERMAL EVAPORATION; THIN FILMS; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CONDUCTION BAND OFFSET; HETEROJUNCTION DIODES; NIO THIN FILM; PHOTOCURRENT GENERATIONS; PREFERENTIAL ORIENTATION; STRUCTURAL INVESTIGATION; THERMAL EVAPORATION METHOD; ZNO NANOROD;

HETEROJUNCTIONS;

EID: 84922344177     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2015.01.155     Document Type: Article

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