A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis

Transactions of the Korean Institute of Electrical Engineers

Volumn 60, Issue 1, 2011, Pages 105-108

  Kim, Kwangeun ^a   Lee, Myeongwon ^a   Yun, Junggwon ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

Dielectrophoresis; Nanoparticle; Nanowire; P n heterojunction; Si; Zno

Indexed keywords

DIODES; ELECTROPHORESIS; FABRICATION; HETEROJUNCTIONS; METAL NANOPARTICLES; NANOPARTICLES; NANOWIRES; SEMICONDUCTOR DIODES; SILICON; THIN FILMS; ZINC OXIDE;

HIGH CONDUCTIVITY; HIGH SURFACE-TO-VOLUME RATIO; INPUT FREQUENCY; OPTOELECTRICAL; P-N HETEROJUNCTIONS; RECTIFYING CHARACTERISTICS; TURN-ON VOLTAGES; ZNO NANOPARTICLES;

LIGHT EMITTING DIODES;

EID: 79551499851     PISSN: 19758359     EISSN: None     Source Type: Journal    
DOI: 10.5370/KIEE.2011.60.1.105     Document Type: Article

References (10)

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