Low-noise multispectral photodetectors made from all solution-processed inorganic semiconductors

Advanced Functional Materials

Volumn 24, Issue 45, 2014, Pages 7205-7210

  Manders, Jesse R ^a   Lai, Tzung Han ^a   An, Yanbin ^a   Xu, Weikai ^a   Lee, Jaewoong ^a   Kim, Do Young ^a   Bosman, Gijs ^a   So, Franky ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; GERMANIUM; PHOTONS; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS;

DOUBLE HETEROSTRUCTURES; ELECTRONICS APPLICATIONS; INGAAS PHOTODETECTORS; INORGANIC SEMICONDUCTORS; LARGE-SCALE PROCESSING; LINEAR DYNAMIC RANGES; NOISE EQUIVALENT POWER; SPECIFIC DETECTIVITY;

PHOTODETECTORS;

EID: 84918783442     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201402094     Document Type: Article

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