Effects of hydroxylation and silanization on the surface properties of ZnO nanowires

ACS Applied Materials and Interfaces

Volumn 7, Issue 9, 2015, Pages 5331-5337

  Garcia Nunez C ^a   Sachsenhauser, M ^b   Blashcke, B ^b   Garcia Marin A ^a   Garrido, Jose A ^b   Pau, Jose L ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

contact potential difference; hydroxylation; silanization; surface band bending; surface photovoltage; X ray photoemission spectroscopy; ZnO nanowires

Indexed keywords

CONTACT ANGLE; II-VI SEMICONDUCTORS; NANOWIRES; OXIDE MINERALS; PHOTOELECTRON SPECTROSCOPY; SURFACE PROPERTIES; URANIUM METALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CONTACT POTENTIAL DIFFERENCE; SILANIZATIONS; SURFACE BAND BENDING; SURFACE PHOTOVOLTAGES; X RAY PHOTOEMISSION SPECTROSCOPY; ZNO NANOWIRES;

HYDROXYLATION;

NANOWIRE; SILANE DERIVATIVE; ZINC OXIDE;

ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRICITY; HYDROXYLATION; SURFACE PROPERTY; ULTRASTRUCTURE; ULTRAVIOLET RADIATION; WETTABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICITY; HYDROXYLATION; MICROSCOPY, ATOMIC FORCE; NANOWIRES; PHOTOELECTRON SPECTROSCOPY; SILANES; SURFACE PROPERTIES; ULTRAVIOLET RAYS; WETTABILITY; ZINC OXIDE;

EID: 84924588066     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am508752m     Document Type: Article

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