Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Nano Letters

Volumn 16, Issue 1, 2016, Pages 182-187

  Thompson, Michael D ^a   Alhodaib, Aiyeshah ^a   Craig, Adam P ^a   Robson, Alex ^a   Aziz, Atif ^a   Krier, Anthony ^a   Svensson, Johannes ^b   Wernersson, Lars Erik ^b   Sanchez, Ana M ^c   Marshall, Andrew R J ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b LUND UNIVERSITY   (Sweden)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

InAsSb; midwavelength infrared; Nanowires; photodetector

Indexed keywords

III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; NANOWIRES; PHOTODETECTORS; PHOTONS;

INASSB; LOW-LEAKAGE CURRENT; MID-WAVELENGTH INFRARED; NANOWIRE ARRAYS; SHORT WAVE INFRARED; SI SUBSTRATES; SILICON TECHNOLOGIES;

LEAKAGE CURRENTS;

INDIUM; NANOWIRE; SILICON; ZINC;

CHEMISTRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; ULTRASTRUCTURE;

INDIUM; MICROSCOPY, ELECTRON, SCANNING; NANOWIRES; SEMICONDUCTORS; SILICON; ZINC;

EID: 84957605277     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b03449     Document Type: Article

References (26)

1. Tomioka, K.; Tanaka, T.; Hara, S.; Hiruma, K.; Fukui, T. III-V Nanowires on Si Substrate: Selective-Area Growth and Device Applications IEEE J. Sel. Top. Quantum Electron. 2011, 17, 1112-1129 10.1109/JSTQE.2010.2068280
2. Sourribes, M. J. L.; Isakov, I.; Panfilova, M.; Liu, H.; Warburton, P. A. Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon Nano Lett. 2014, 14, 1643-1650 10.1021/nl5001554
3. Ertekin, E.; Greaney, P. A.; Chrzan, D. C.; Sands, T. D. Equilibrium limits of coherency in strained nanowire heterostructures J. Appl. Phys. 2005, 97, 114325 10.1063/1.1903106
4. Krishnamachari, U.; Borgstrom, M.; Ohlsson, B. J.; Panev, N.; Samuelson, L.; Seifert, W.; Larsson, M. W.; Wallenberg, L. R. Defect-free InP nanowires grown in [001] direction on InP (001) Appl. Phys. Lett. 2004, 85, 2077-2079 10.1063/1.1784548
5. Ker, P.; Marshall, A.; Krysa, A. B.; David, J.; Tan, C. H. Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes IEEE J. Quantum Electron. 2011, 47, 1123-1128 10.1109/JQE.2011.2159194
6. Maddox, S. J.; Sun, W.; Lu, Z.; Nair, H. P.; Campbell, J. C.; Bank, S. R. Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping Appl. Phys. Lett. 2012, 101, 151124 10.1063/1.4757424
7. Shao, H.; Li, W.; Torfi, A.; Moscicka, D.; Wang, W. Room-temperature InAsSb photovoltaic detectors for mid-infrared applications IEEE Photonics Technol. Lett. 2006, 18, 1756-1758 10.1109/LPT.2006.879941
8. Weiss, E.; Klin, O.; Grossmann, S.; Snapi, N.; Lukomsky, I.; Aronov, D.; Yassen, M.; Berkowicz, E.; Glozman, A.; Klipstein, P.; Fraenkel, A.; Shtrichman, I. InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs J. Cryst. Growth 2012, 339, 31-35 10.1016/j.jcrysgro.2011.11.076
9. Wagner, R. S.; Ellis, W. C. Vapor-liquid-solid Mechanism Of Single Crystal Growth Appl. Phys. Lett. 1964, 4, 89-90 10.1063/1.1753975
10. Mandl, B.; Stangl, J.; Martensson, T.; Mikkelsen, A.; Eriksson, J.; Karlsson, L. S.; Bauer, G.; Samuelson, L.; Seifert, W. Au-Free Epitaxial Growth of InAs Nanowires Nano Lett. 2006, 6, 1817-1821 10.1021/nl060452v
11. Brotherton, S. D.; Lowther, J. E. Electron and Hole Capture at Au and Pt Centers in Silicon Phys. Rev. Lett. 1980, 44, 606-609 10.1103/PhysRevLett.44.606
12. Anyebe, E.; Rajpalke, M.; Veal, T.; Jin, C.; Wang, Z.; Zhuang, Q. Surfactant effect of antimony addition to the morphology of self-catalyzed InAsSb nanowires Nano Res. 2015, 8, 1309-1319 10.1007/s12274-014-0621-x
13. Austin, M. D.; Ge, H.; Wu, W.; Li, M.; Yu, Z.; Wasserman, D.; Lyon, S. A.; Chou, S. Y. Fabrication of 5nm linewidth and 14nm pitch features by nanoimprint lithography Appl. Phys. Lett. 2004, 84, 5299-5301 10.1063/1.1766071
14. Munshi, A. M.; Dheeraj, D. L.; Fauske, V. T.; Kim, D. C.; Huh, J.; Reinertsen, J. F.; Ahtapodov, L.; Lee, K. D.; Heidari, B.; van Helvoort, A. T. J.; Fimland, B. O.; Weman, H. Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography Nano Lett. 2014, 14, 960-966 10.1021/nl404376m
15. Joyce, H.; Gao, Q.; Wong-Leung, J.; Kim, Y.; Tan, H.; Jagadish, C. Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications IEEE J. Sel. Top. Quantum Electron. 2011, 17, 766-778 10.1109/JSTQE.2010.2077621
16. Hertenberger, S.; Rudolph, D.; Bichler, M.; Finley, J. J.; Abstreiter, G.; Koblmuller, G. Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy J. Appl. Phys. 2010, 108, 114316 10.1063/1.3525610
17. Johansson, J.; Bolinsson, J.; Ek, M.; Caroff, P.; Dick, K. A. Combinatorial Approaches to Understanding Polytypism in IIIV Nanowires ACS Nano 2012, 6, 6142-6149 10.1021/nn301477x
18. Thelander, C.; Caroff, P.; Plissard, S.; Dey, A. W.; Dick, K. A. Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires Nano Lett. 2011, 11, 2424-2429 10.1021/nl2008339
19. Xu, T.; Dick, K. A.; Plissard, S.; Nguyen, T. H.; Makoudi, Y.; Berthe, M.; Nys, J.-P.; Wallart, X.; Grandidier, B.; Caroff, P. Faceting, composition and crystal phase evolution in IIIV antimonide nanowire heterostructures revealed by combining microscopy techniques Nanotechnology 2012, 23, 095702 10.1088/0957-4484/23/9/095702
20. Murayama, M.; Nakayama, T. Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces Phys. Rev. B: Condens. Matter Mater. Phys. 1994, 49, 4710-4724 10.1103/PhysRevB.49.4710
21. Svensson, J.; Anttu, N.; Vainorius, N.; Borg, B. M.; Wernersson, L.-E. Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors Nano Lett. 2013, 13, 1380-1385 10.1021/nl303751d
22. Koblmuller, G.; Hertenberger, S.; Vizbaras, K.; Bichler, M.; Bao, F.; Zhang, J.-P.; Abstreiter, G. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy Nanotechnology 2010, 21, 365602 10.1088/0957-4484/21/36/365602
23. Koblmuller, G.; Vizbaras, K.; Hertenberger, S.; Bolte, S.; Rudolph, D.; Becker, J.; Doblinger, M.; Amann, M.-C.; Finley, J. J.; Abstreiter, G. Diameter dependent optical emission properties of InAs nanowires grown on Si Appl. Phys. Lett. 2012, 101, 053103 10.1063/1.4739001
24. Anttu, N.; Abrand, A.; Asoli, D.; Heurlin, M.; Aberg, I.; Samuelson, L.; Borgstrom, M. Absorption of light in InP nanowire arrays Nano Res. 2014, 7, 816-823 10.1007/s12274-014-0442-y
25. Foldyna, M.; Yu, L.; Roca i Cabarrocas, P. Theoretical short-circuit current density for different geometries and organizations of silicon nanowires in solar cells Sol. Energy Mater. Sol. Cells 2013, 117, 645-651 10.1016/j.solmat.2012.10.014
26. Higashi, G. S.; Chabal, Y. J.; Trucks, G. W.; Raghavachari, K. Ideal hydrogen termination of the Si (111) surface Appl. Phys. Lett. 1990, 56, 656-658 10.1063/1.102728