Temperature dependence of leakage current in InAs avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 47, Issue 8, 2011, Pages 1123-1128

  Ker, Pin Jern ^a   Marshall, Andrew R J ^b   Krysa, Andrey B ^a   David, John P R ^a   Tan, Chee Hing ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Avalanche photodiode; Impact ionization; InAs; Leakage current

Indexed keywords

ACTIVATION ENERGY; AVALANCHE PHOTODIODES; CARRIER CONCENTRATION; IMPACT IONIZATION; PHOTODIODES; TEMPERATURE DISTRIBUTION;

AVALANCHE MULTIPLICATION FACTOR; BULK CURRENTS; DYNAMIC RESISTANCE; INAS; MEASUREMENT AND ANALYSIS; SURFACE CURRENT; SURFACE LEAKAGE CURRENTS; TEMPERATURE DEPENDENCE;

LEAKAGE CURRENTS;

EID: 80755153838     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2159194     Document Type: Article

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