Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

Applied Physics Letters

Volumn 101, Issue 15, 2012, Pages

  Maddox, S J ^a   Sun, W ^b   Lu, Z ^b   Nair, H P ^a   Campbell, J C ^b   Bank, S R ^a  

^a The University of Texas at Austin   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; ENERGETIC BARRIERS; GROWTH CONDITIONS; INAS; LOW NOISE; MULTIPLICATION GAIN; P-TYPE CONTACT; REVERSE BIAS; ROOM TEMPERATURE;

DARK CURRENTS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY;

AVALANCHE PHOTODIODES;

EID: 84867521008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757424     Document Type: Article

References (18)

1. A. R. J. Marshall, C. H. Tan, J. S. Ng, J. P. R. David, and M. Hopkinson, in 3rd EMRS DTC Technical Conference (Edinburgh, Scotland, UK, 2006).
2. A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, Appl. Phys. Lett. 93, 111107 (2008). 10.1063/1.2980451
3. A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, in 6th EMRS DTC Technical Conference (Edinburgh, Scotland, UK, 2009).
4. A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, in 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 (IEEE, 2008), pp. 296-297.
5. A. R. J. Marshall, P. J. Ker, A. Krysa, J. P. R. David, and C. H. Tan, Opt. Express 19, 23341 (2011). 10.1364/OE.19.023341
6. A. R. J. Marshall, P. Vines, P. J. Ker, J. P. R. David, and C. H. Tan, IEEE J. Quantum Electron. 47, 858 (2011). 10.1109/JQE.2011.2128299
7. P. J. Ker, A. R. J. Marshall, J. P. R. David, and C. H. Tan, Phys. Status Solidi C 9, 310 (2012). 10.1002/pssc.201100277
8. W. Walukiewicz, Phys. Rev. B 37, 4760 (1988). 10.1103/PhysRevB.37.4760
9. S. Najmi, X. K. Chen, A. Yang, M. Steger, M. L. W. Thewalt, and S. P. Watkins, Phys. Rev. B 74, 113202 (2006). 10.1103/PhysRevB.74.113202
10. Z. R. Wasilewski, S. J. Rolfe, and R. A. Wilson, J. Cryst. Growth 175-176 (Part 2), 1270 (1997). 10.1016/S0022-0248(96)01229-8
11. A. R. J. Marshall, C. H. Tan, J. P. R. David, M. J. Steer, and M. Hopkinson, in 4th EMRS DTC Technical Conference (Edinburgh, Scotland, UK, 2007).
12. H. S. Kim, E. Plis, A. Khoshakhlagh, S. Myers, N. Gautam, Y. D. Sharma, L. R. Dawson, S. Krishna, S. J. Lee, and S. K. Noh, Appl. Phys. Lett. 96, 033502 (2010). 10.1063/1.3275711
13. S. Adachi, Physical Properties of III-V Semiconductor Compounds (Wiley-VCH Verlag GmbH Co. KGaA, 1992).
14. A. R. J. Marshall, C. H. Tan, J. P. R. David, J. S. Ng, and M. Hopkinson, Proc. SPIE 6740, 67400H (2007). 10.1117/12.740700
15. A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, IEEE Photon. Technol. Lett. 21, 866 (2009). 10.1109/LPT.2009.2019625
16. R. J. McIntyre, IEEE Trans. Electron Devices 13, 164 (1966). 10.1109/T-ED.1966.15651
17. R. J. McIntyre, IEEE Trans. Electron Devices 46, 1623 (1999). 10.1109/16.777150
18. J. D. Beck, C.-F. Wan, M. A. Kinch, and J. E. Robinson, Proc. SPIE 4454, 188 (2001). 10.1117/12.448174