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Volumn 339, Issue 1, 2012, Pages 31-35

InAsSb-based XB nn bariodes grown by molecular beam epitaxy on GaAs

(12) Weiss, Eliezer a Klin, Olga a Grossmann, Steve a Snapi, Noam a Lukomsky, Inna a Aronov, Daniel a Yassen, Michael a Berkowicz, Eyal a Glozman, Alex a Klipstein, Philip a Fraenkel, Avraham a Shtrichman, Itay a

a SCD Semiconductor Devices Ltd (Israel)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting indium compounds; B3. Infrared devices

Indexed keywords

ACTIVE LAYER; ANTIMONIDES; DEPLETION LAYER; DETECTOR ARRAYS; ELECTRO-OPTICAL CHARACTERISTICS; FOCAL PLANE ARRAY DETECTOR; GAAS; GENERATION-RECOMBINATION; HIGH DENSITY; HIGH OPERATING TEMPERATURE; LATTICE-MATCHED; LATTICE-MISMATCHED SUBSTRATES; MIDWAVE INFRARED; NARROW BAND GAP; PIN PHOTODIODE; PIXEL FORMATS; TEST DEVICE; TRAP ASSISTED TUNNELING;

DARK CURRENTS; DETECTORS; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM ARSENIDE; INDIUM ANTIMONIDES; INFRARED RADIATION; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS;

GALLIUM ALLOYS;

EID: 84855197712 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.11.076 Document Type: Article

Times cited : (66)

References (16)

1
- 84855205658
- In 1919, William Henry Eccles coined the term diode from the Greek word dia, meaning through, and ode (from οδος), meaning path (October 7th, 2011:). Bariode is a portmanteau of the term barrier diode that describes a semiconductor photo-detector in which a clear path through the device is provided for minority carriers from the photon absorbing layer, while the path of its majority carriers is blocked by means of a barrier. An n-type bariode has an n-type AL and BrL, while in a p-type bariode, their polarities are reversed
- In 1919, William Henry Eccles coined the term diode from the Greek word dia, meaning through, and ode (from οδος), meaning path (October 7th, 2011: 〈http://en.wikipedia.org/wiki/Diode#History〉) . Bariode is a portmanteau of the term barrier diode that describes a semiconductor photo-detector in which a clear path through the device is provided for minority carriers from the photon absorbing layer, while the path of its majority carriers is blocked by means of a barrier. An n-type bariode has an n-type AL and BrL, while in a p-type bariode, their polarities are reversed.

2
- 84855191025
- 2R and references therein
- P. Klipstein, O. Klin, S. Grossman, N. Snapi, I. Lukomsky, M. Brumer, M. Yassen, D. Aronov, E. Berkowicz, A. Glozman, T. Fishman, O. Magen, I. Shtrichman, and E. Weiss Proceedings of SPIE 8012 2011 8012 2R and references therein
- (2011) Proceedings of SPIE , vol.8012 , pp. 8012
- Klipstein, P.¹ Klin, O.² Grossman, S.³ Snapi, N.⁴ Lukomsky, I.⁵ Brumer, M.⁶ Yassen, M.⁷ Aronov, D.⁸ Berkowicz, E.⁹ Glozman, A.¹⁰ Fishman, T.¹¹ Magen, O.¹² Shtrichman, I.¹³ Weiss, E.¹⁴

3
- 81755178966
- references therein
- P. Klipstein, O. Klin, S. Grossman, N. Snapi, I. Lukomsky, D. Aronov, M. Yassen, A. Glozman, T. Fishman, E. Berkowicz, O. Magen, I. Shtrichman, and E. Weiss Optical Engineering 50 2011 061002 and references therein
- (2011) Optical Engineering , vol.50 , pp. 061002
- Klipstein, P.¹ Klin, O.² Grossman, S.³ Snapi, N.⁴ Lukomsky, I.⁵ Aronov, D.⁶ Yassen, M.⁷ Glozman, A.⁸ Fishman, T.⁹ Berkowicz, E.¹⁰ Magen, O.¹¹ Shtrichman, I.¹² Weiss, E.¹³

4
- 84855205659
- M.J. Furlong, R. Martinez, S. Amirhaghi, D. Small, B. Smith, and A. Mowbray Proceedings of SPIE 8012 2011 801211
- (2011) Proceedings of SPIE , vol.8012 , pp. 801211
- Furlong, M.J.¹ Martinez, R.² Amirhaghi, S.³ Small, D.⁴ Smith, B.⁵ Mowbray, A.⁶

5
- 66749084981
- B.-M. Nguyen, D. Hoffman, E.K.-w. Huang, S. Bogdanov, P.-Y. Delaunay, M. Razeghi, and M.Z. Tidrow Applied Physics Letters 94 2009 223506
- (2009) Applied Physics Letters , vol.94 , pp. 223506
- Nguyen, B.-M.¹ Hoffman, D.² Huang, E.K.-W.³ Bogdanov, S.⁴ Delaunay, P.-Y.⁵ Razeghi, M.⁶ Tidrow, M.Z.⁷

6
- 70350732757
- S. Abdollahi Pour, B.-M. Nguyen, S. Bogdanov, E.K. Huang, and M. Razeghi Applied Physics Letters 95 2009 173505
- (2009) Applied Physics Letters , vol.95 , pp. 173505
- Abdollahi Pour, S.¹ Nguyen, B.-M.² Bogdanov, S.³ Huang, E.K.⁴ Razeghi, M.⁵

7
- 78249285225
- 7660 1F
- M. Razeghi, E.K. Huang, B.-M. Nguyen, S. Abdollahi Pour, and P.-Y. Delaunay Proceedings of SPIE 7660 2010 7660 1F
- (2010) Proceedings of SPIE , vol.7660
- Razeghi, M.¹ Huang, E.K.² Nguyen, B.-M.³ Abdollahi Pour, S.⁴ Delaunay, P.-Y.⁵

8
- 33845446224
- See for example
- See for example M. Mehta, G. Balakrishnan, S. Huang, A. Khoshakhlagh, A. Jallipalli, P. Patel, M.N. Kutty, L.R. Dawson, and D.L. Huffaker Applied Physics Letters 89 2006 211110
- (2006) Applied Physics Letters , vol.89 , pp. 211110
- Mehta, M.¹ Balakrishnan, G.² Huang, S.³ Khoshakhlagh, A.⁴ Jallipalli, A.⁵ Patel, P.⁶ Kutty, M.N.⁷ Dawson, L.R.⁸ Huffaker, D.L.⁹

9
- 34948890650
- J. Tatebayashi, A. Jallipalli, M.N. Kutty, S.H. Huang, G. Balakrishnan, L.R. Dawson, and D.L. Huffaker Applied Physics Letters 91 2007 141102
- (2007) Applied Physics Letters , vol.91 , pp. 141102
- Tatebayashi, J.¹ Jallipalli, A.² Kutty, M.N.³ Huang, S.H.⁴ Balakrishnan, G.⁵ Dawson, L.R.⁶ Huffaker, D.L.⁷

10
- 22244476805
- W. Dobbelaere, J. De Boeck, W. De Raedt, J. Vanhellemont, G. Zou, M. Van Hove, B. Brijs, R. Mertens, and G. Borghs MRS Symposium Proceedings 216 1991 181
- (1991) MRS Symposium Proceedings , vol.216 , pp. 181
- Dobbelaere, W.¹ De Boeck, J.² De Raedt, W.³ Vanhellemont, J.⁴ Zou, G.⁵ Van Hove, M.⁶ Brijs, B.⁷ Mertens, R.⁸ Borghs, G.⁹

11
- 0001361639
- W. Dobbelaere, J. De Boeck, P. Heremans, R. Mertens, G. Borghs, W. Luyten, and J. Van Landuyt Applied Physics Letters 60 1992 3256
- (1992) Applied Physics Letters , vol.60 , pp. 3256
- Dobbelaere, W.¹ De Boeck, J.² Heremans, P.³ Mertens, R.⁴ Borghs, G.⁵ Luyten, W.⁶ Van Landuyt, J.⁷

12
- 0035652801
- C. Besikci, S. Ozer, C. Van Hoof, L. Zimmermann, J. John, and P. Merken Semiconductor Science and Technology 16 2001 992
- (2001) Semiconductor Science and Technology , vol.16 , pp. 992
- Besikci, C.¹ Ozer, S.² Van Hoof, C.³ Zimmermann, L.⁴ John, J.⁵ Merken, P.⁶

13
- 15844422661
- L. Reijnen, R. Brunton, and I.R. Grant Journal of Crystal Growth 275 2005 e595
- (2005) Journal of Crystal Growth , vol.275 , pp. 595
- Reijnen, L.¹ Brunton, R.² Grant, I.R.³

14
- 79953701080
- 7669 2Y
- P. Klipstein, O. Klin, S. Grossman, N. Snapi, B. Yaakobovitz, M. Brumer, I. Lukomsky, D. Aronov, M. Yassen, B. Yofis, A. Glozman, T. Fishman, E. Berkowicz, O. Magen, I. Shtrichman, and E. Weiss Proceedings of SPIE 7660 2010 7669 2Y
- (2010) Proceedings of SPIE , vol.7660
- Klipstein, P.¹ Klin, O.² Grossman, S.³ Snapi, N.⁴ Yaakobovitz, B.⁵ Brumer, M.⁶ Lukomsky, I.⁷ Aronov, D.⁸ Yassen, M.⁹ Yofis, B.¹⁰ Glozman, A.¹¹ Fishman, T.¹² Berkowicz, E.¹³ Magen, O.¹⁴ Shtrichman, I.¹⁵ Weiss, E.¹⁶

15
- 77951999852
- 7608 1V
- P.C. Klipstein, O. Klin, S. Grossman, N. Snapi, B. Yaakobovitz, M. Brumer, I. Lukomsky, D. Aronov, M. Yassen, B. Yofis, A. Glozman, T. Fishman, E. Berkowicz, O. Magen, I. Shtrichman, and Eliezer Weiss Proceedings of SPIE 7608 2010 7608 1V
- (2010) Proceedings of SPIE , vol.7608
- Klipstein, P.C.¹ Klin, O.² Grossman, S.³ Snapi, N.⁴ Yaakobovitz, B.⁵ Brumer, M.⁶ Lukomsky, I.⁷ Aronov, D.⁸ Yassen, M.⁹ Yofis, B.¹⁰ Glozman, A.¹¹ Fishman, T.¹² Berkowicz, E.¹³ Magen, O.¹⁴ Shtrichman, I.¹⁵ Weiss, E.¹⁶

16
- 84855191027
- The somewhat lower QE for the bariode grown on GaAs is most probably due to radiation absorption in the 4 μm undoped GaSb BfL in this sample
- The somewhat lower QE for the bariode grown on GaAs is most probably due to radiation absorption in the 4 μm undoped GaSb BfL in this sample.

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