Temperature dependence and conduction mechanism after analog soft breakdown

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 417-423

  Nigam, T ^a   Martin, S ^b   Abusch Magder, D ^b  

^a AGERE SYSTEMS   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RECONFIGURABLE HARDWARE;

CIRCUIT LIFETIME; CIRCUIT PERFORMANCE; CONDUCTION MECHANISM; CURRENT CONDUCTION; DIRECT TUNNELING; PMOS TRANSISTORS; SUBSTRATE CURRENT; TEMPERATURE DEPENDENCE;

TEMPERATURE DISTRIBUTION;

EID: 84955301633     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197784     Document Type: Conference Paper

References (28)

1. S. Lee, B. Cho, J. Kim, and S. Choi, "Quasi-breakdown of ultrathin gate oxide under high field stress", IEDM Tech. Dig., pp. 605-608 (1994).
2. D. J. DiMaria, et al., "Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon", J. Appl. Phys., 73, 7, pp. 3367-3384 (1993).
3. R. Degraeve, G. Groeseneken, I. De Wolf, and H.E. Maes, "Oxide and interface degradation and breakdown under medium and high field injection conditions: a correlation study", Microelectronic Engineering, 28, (1-4), pp. 313-316 (1995).
4. R. Degraeve, et al., "New insights in the relation between electron trap generation and the statistical properties of oxide breakdown", IEEE Trans. Electron Devices, 45, (4), pp. 904-911 (1998).
5. M. A. Alam, B. Weir, and P.J. Silverman, "A Study of Soft and Hard Breakdown-Part I and II", IEEE Trans. Electron Devices, 49, (2), pp. 232 (2002).
6. B.E. Weir, P.J. Silverman, D. Monroe, K.S. Krisch, M. A. Alam, G.B. Alers, T.W. Sorsch, G.L. Timp, F. Bauman, C.T. Liu, Y. Ma, and D. Hwang, "Ultra thin gate dielectrics: They breakdown but do they fail?", IEDM Tech. Dig., pp. 73-76 (1997).
7. M. A. Alam, R. K. Smith, B.E. Weir and P.J. Silverman, "Statistically independent soft breakdowns redefine oxide reliability specification", IEDM Tech. Dig., pp. (2002).
8. J. Sune and E. Wu, "Statistics of successive breakdown events for ultra-thin gate oxides", IEDM Tech. Dig., pp. (2002).
9. T. Sakura, H. Utsunomiya, Y. Kamakura, and K. Taniguchi, "A detailed study of soft-and pre-softbreakdown in small geometry MOS structures", IEDM Tech. Dig., pp. (1998).
10. K. Okada, and K. Taniguchi, "Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides", Appl. Phys. Lett., 70, (3), pp. 351-353 (1997).
11. E. Miranda, J. Sune, R. Rodrigues, M. Nafaria, and X. Aymerich, "A function-fit model for the soft breakdown failure mode", IEEE Electron Device Lett., 20, pp. 265-267 (1999).
12. Y. Kamakura, et al., "Temperature dependence of current voltage characteristics of SiOathin films after soft breakdown", Workshop on Dielectric Thin films for Future ULSI Devices, Japan, pp.9-10 1999.
13. S. Takagi M. Takayanagi and A. Toriumi, "Experimental evidence of physical model for Direct Tunneling current in unstressed/stressed ultarthin gate oxide", IEDM Tech. Dig., pp. (1999).
14. F. Crupi, R. Degraeve, G. Groeseneken, T. Nigam, and H.E. Maes, "On the properties of the gate and substrate current after soft breakdown in ultra-thin oxides", IEEE Trans. Electron Devices, 45, (11), pp. 2329-2334 (1998).
15. M. Rasras, I. De Wolf, G. Groeseneken, R. Degraeve and H.E. Maes, "Substrate hole current origin after oxide breakdown", IEDM Tech. Dig., pp. (2000).
16. T. Yashida, S. Miyazaki, and M. Hirose, "Analytical modeling of quasi-breakdown of ultra-thin oxides under constant current stress", Ext. Absr. of the 1996 SSDM, Yokohama, pp. 539-541, (1996).
17. M.K. Radhakrishnan, K.L. Pey, C.H. Tung, W.H. Lin, and S.H. Ong, "Physical analysis of reliability degradation in sub-micron devices", IEDM Tech. Dig., pp. (2001).
18. Y. Xu, D. Ephron, and M. R. Beasley, "Directed inelastic hopping of electrons though metal-insulator-metal tunnel junctions", Physical Review B, 52, (4), pp. 2843 (1995).
19. M. Houssa, T. Nigam, P. Mertens, and M. M. Heyns, "Model for current-voltage characteristics of ultra-thin oxides after soft-breakdown", J. Appl. Phys., 84, -, pp. 4351-4355 (1998).
20. 2 films", Int. Rel. Phys. Sym. Proceedings, pp.367, (2001).
21. M.S. Raven, "Charge transport and conductance oscillations in gold island films", Physical Review B, 29, (11), pp. 6218-6225 (1984).
22. K. K. Likharev, "Correlated discrete transfer of single electrons in ultra small tunnel junctions", IBM J. RES. DEVELOP., 30, (1), pp. 144-157 (1988).
23. D.V. Averin, and K.K. Likharev, "Coulomb blockade of Single-electron tunneling and coherent oscillations in small tunnel junctions", J. of Low Temp. Phys., 62, (3/4), pp. 345-373 (1986).
24. A. N. Korotkov "Coulomb blockade and digital single electron devices", Molecular Electronics, ed. by J. Jortner and M. A. Ratner.
25. D.V. Averin, A. N. Korotkov, K. K. Likharev, "Theory of single-electron charging of quantum wells and dots", Physical Review B, 44, (12), pp. 6199-6211 (1991).
26. 2/Si structures", Solid-State Electronics, 38, pp. 1465-1471 (1995).
27. Single Charge tunneling: Coulomb blockade Phenomena in Nanostructures, NATO ASI Series 1992. Edited by H. Grabert, and M. H. Devoret.
28. D. V. Averin, A. A. Odintsov, and S. V. Vyshenskii, "Ultimate accuracy of single electron dc current standards", J. Appl. Phys., 73, 3, pp. 1297 (1993).