메뉴 건너뛰기




Volumn 6, Issue , 2015, Pages

Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; PLATINUM; SILICON;

EID: 84954560216     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms8536     Document Type: Article
Times cited : (49)

References (43)
  • 1
    • 84867304039 scopus 로고    scopus 로고
    • A roadmap for graphene
    • Novoselov, K. S. et al. A roadmap for graphene. Nature 490, 192-200 (2012).
    • (2012) Nature , vol.490 , pp. 192-200
    • Novoselov, K.S.1
  • 2
    • 80755142865 scopus 로고    scopus 로고
    • Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition
    • Wood, J. D., Schmucker, S. W., Lyons, A. S., Pop, E. & Lyding, J. W. Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition. Nano Lett. 11, 4547-4554 (2011).
    • (2011) Nano Lett. , vol.11 , pp. 4547-4554
    • Wood, J.D.1    Schmucker, S.W.2    Lyons, A.S.3    Pop, E.4    Lyding, J.W.5
  • 3
    • 79952043052 scopus 로고    scopus 로고
    • Influence of copper crystal surface on the CVD growth of large area monolayer graphene
    • Zhao, L. et al. Influence of copper crystal surface on the CVD growth of large area monolayer graphene. Solid State Commun. 151, 509-513 (2011).
    • (2011) Solid State Commun. , vol.151 , pp. 509-513
    • Zhao, L.1
  • 4
    • 84856021688 scopus 로고    scopus 로고
    • Domain structure and boundary in single-layer graphene grown on Cu(111) and Cu(100) films
    • Ogawa, Y. et al. Domain structure and boundary in single-layer graphene grown on Cu(111) and Cu(100) films. J. Phys. Chem. Lett. 3, 219-226 (2011).
    • (2011) J. Phys. Chem. Lett. , vol.3 , pp. 219-226
    • Ogawa, Y.1
  • 5
    • 84874412574 scopus 로고    scopus 로고
    • Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene
    • Murdock, A. T. et al. Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene. Acs Nano 7, 1351-1359 (2013).
    • (2013) Acs Nano , vol.7 , pp. 1351-1359
    • Murdock, A.T.1
  • 6
    • 84872057157 scopus 로고    scopus 로고
    • Triggering the continuous growth of graphene toward millimeter-sized grains
    • Wu, T. et al. Triggering the continuous growth of graphene toward millimeter-sized grains. Adv. Funct. Mater. 23, 198-203 (2013).
    • (2013) Adv. Funct. Mater. , vol.23 , pp. 198-203
    • Wu, T.1
  • 7
    • 84859125408 scopus 로고    scopus 로고
    • Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum
    • Gao, L. B. et al. Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum. Nat. Commun. 3, 699 (2012).
    • (2012) Nat. Commun. , vol.3 , pp. 699
    • Gao, L.B.1
  • 8
    • 84954471216 scopus 로고    scopus 로고
    • Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene
    • Zhou, H. et al. Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene. Nat. Commun. 4, 2096 (2013).
    • (2013) Nat. Commun. , vol.4 , pp. 2096
    • Zhou, H.1
  • 9
    • 79957494809 scopus 로고    scopus 로고
    • Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition
    • Yu, Q. et al. Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. Nat. Mater. 10, 443-449 (2011).
    • (2011) Nat. Mater. , vol.10 , pp. 443-449
    • Yu, Q.1
  • 10
    • 84857022965 scopus 로고    scopus 로고
    • Mapping the electronic properties of individual graphene grain boundaries
    • Tapasztó, L. et al. Mapping the electronic properties of individual graphene grain boundaries. Appl. Phys. Lett. 100, 053114 (2012).
    • (2012) Appl. Phys. Lett. , vol.100
    • Tapasztó, L.1
  • 11
    • 84861418233 scopus 로고    scopus 로고
    • Uniform hexagonal graphene flakes and films grown on liquid copper surface
    • Geng, D. C. et al. Uniform hexagonal graphene flakes and films grown on liquid copper surface. Proc. Natl Acad. Sci. USA 109, 7992-7996 (2012).
    • (2012) Proc. Natl Acad. Sci. USA , vol.109 , pp. 7992-7996
    • Geng, D.C.1
  • 12
    • 80054035300 scopus 로고    scopus 로고
    • In situ characterization of alloy catalysts for lowt-emperature graphene growth
    • Weatherup, R. S. et al. In situ characterization of alloy catalysts for lowt-emperature graphene growth. Nano Lett. 11, 4154-4160 (2011).
    • (2011) Nano Lett. , vol.11 , pp. 4154-4160
    • Weatherup, R.S.1
  • 13
    • 84855690775 scopus 로고    scopus 로고
    • Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene
    • Dai, B. Y. et al. Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene. Nat. Commun. 2, 522 (2011).
    • (2011) Nat. Commun. , vol.2 , pp. 522
    • Dai, B.Y.1
  • 14
    • 84892722014 scopus 로고    scopus 로고
    • Highly uniform growth of monolayer graphene by chemical vapor deposition on Cu-Ag alloy catalysts
    • Shin, H. A. S. et al. Highly uniform growth of monolayer graphene by chemical vapor deposition on Cu-Ag alloy catalysts. Phys. Chem. Chem. Phys. 16, 3087-3094 (2014).
    • (2014) Phys. Chem. Chem. Phys. , vol.16 , pp. 3087-3094
    • Shin, H.A.S.1
  • 15
    • 84886049685 scopus 로고    scopus 로고
    • Designed CVD growth of graphene via process engineering
    • Yan, K., Fu, L., Peng, H. L. & Liu, Z. F. Designed CVD growth of graphene via process engineering. Acc. Chem. Res. 46, 2263-2274 (2013).
    • (2013) Acc. Chem. Res. , vol.46 , pp. 2263-2274
    • Yan, K.1    Fu, L.2    Peng, H.L.3    Liu, Z.F.4
  • 16
    • 84900332718 scopus 로고    scopus 로고
    • Direct growth of high-quality graphene on high-kappa dielectric SrTiO3 substrates
    • Sun, J. Y. et al. Direct growth of high-quality graphene on high-kappa dielectric SrTiO3 substrates. J. Am. Chem. Soc. 136, 6574-6577 (2014).
    • (2014) J. Am. Chem. Soc. , vol.136 , pp. 6574-6577
    • Sun, J.Y.1
  • 17
    • 84866326380 scopus 로고    scopus 로고
    • Transfer-free electrical insulation of epitaxial graphene from its metal substrate
    • Lizzit, S. et al. Transfer-free electrical insulation of epitaxial graphene from its metal substrate. Nano Lett. 12, 4503-4507 (2012).
    • (2012) Nano Lett. , vol.12 , pp. 4503-4507
    • Lizzit, S.1
  • 18
    • 79961050049 scopus 로고    scopus 로고
    • Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene
    • Vlassiouk, I. et al. Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene. Acs Nano 5, 6069-6076 (2011).
    • (2011) Acs Nano , vol.5 , pp. 6069-6076
    • Vlassiouk, I.1
  • 19
    • 0011403432 scopus 로고
    • 1,1-Dimethyl-1-silaethylene - Heat of formation, ionization-potential and the energy of the silicon-carbon pi-bond
    • Guselnikov, L. E. & Nametkin, N. S. 1,1-Dimethyl-1-silaethylene - heat of formation, ionization-potential and the energy of the silicon-carbon pi-bond. J. Organomet. Chem. 169, 155-164 (1979).
    • (1979) J. Organomet. Chem. , vol.169 , pp. 155-164
    • Guselnikov, L.E.1    Nametkin, N.S.2
  • 20
    • 0034654453 scopus 로고    scopus 로고
    • Thermochemistry for hydrocarbon intermediates chemisorbed on metal surfaces: CHn-m(CH3)(m) with n = 1, 2, 3 and m < = n on Pt, Ir, Os, Pd, Ph, and Ru
    • Kua, J., Faglioni, F. & Goddard, W. A. Thermochemistry for hydrocarbon intermediates chemisorbed on metal surfaces: CHn-m(CH3)(m) with n = 1, 2, 3 and m < = n on Pt, Ir, Os, Pd, Ph, and Ru. J. Am. Chem. Soc. 122, 2309-2321 (2000).
    • (2000) J. Am. Chem. Soc. , vol.122 , pp. 2309-2321
    • Kua, J.1    Faglioni, F.2    Goddard, W.A.3
  • 21
    • 84872455006 scopus 로고
    • The thermochemistry of carbon - Valence states, heats of sublimation and energies of linkage
    • Long, L. H. & Norrish, R. G. W. The thermochemistry of carbon - valence states, heats of sublimation and energies of linkage. Proc. R. Soc. London Ser-A 187, 337-357 (1946).
    • (1946) Proc. R. Soc. London Ser-A , vol.187 , pp. 337-357
    • Long, L.H.1    Norrish, R.G.W.2
  • 22
    • 84884544379 scopus 로고    scopus 로고
    • Graphene nucleation density on copper: Fundamental role of background pressure
    • Vlassiouk, I. et al. Graphene nucleation density on copper: fundamental role of background pressure. J. Phys. Chem. C 117, 18919-18926 (2013).
    • (2013) J. Phys. Chem. C , vol.117 , pp. 18919-18926
    • Vlassiouk, I.1
  • 23
    • 84899635843 scopus 로고    scopus 로고
    • Growth mechanism of graphene on platinum: Surface catalysis and carbon segregation
    • Sun, J. et al. Growth mechanism of graphene on platinum: Surface catalysis and carbon segregation. Appl. Phys. Lett. 104 (2014).
    • (2014) Appl. Phys. Lett. , vol.104
    • Sun, J.1
  • 24
    • 84905833775 scopus 로고    scopus 로고
    • Carbon impurities on graphene synthesized by chemical vapor deposition on platinum
    • Ping, J. L. & Fuhrer, M. S. Carbon impurities on graphene synthesized by chemical vapor deposition on platinum. J. Appl. Phys. 116 (2014).
    • (2014) J. Appl. Phys. , vol.116
    • Ping, J.L.1    Fuhrer, M.S.2
  • 26
    • 34249889913 scopus 로고    scopus 로고
    • On the roughness of single- and bi-layer graphene membranes
    • Meyer, J. C. et al. On the roughness of single- and bi-layer graphene membranes. Solid State Commun. 143, 101-109 (2007).
    • (2007) Solid State Commun. , vol.143 , pp. 101-109
    • Meyer, J.C.1
  • 28
    • 77951026437 scopus 로고    scopus 로고
    • Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
    • Lafkioti, M. et al. Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions. Nano Lett. 10, 1149-1153 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 1149-1153
    • Lafkioti, M.1
  • 29
    • 77949267645 scopus 로고    scopus 로고
    • Towards a quantum resistance standard based on epitaxial graphene
    • Tzalenchuk, A. et al. Towards a quantum resistance standard based on epitaxial graphene. Nat. Nanotechnol. 5, 186-189 (2010).
    • (2010) Nat. Nanotechnol. , vol.5 , pp. 186-189
    • Tzalenchuk, A.1
  • 30
    • 84884260730 scopus 로고    scopus 로고
    • Phase space for the breakdown of the Quantum Hall effect in epitaxial graphene
    • Alexander-Webber, J. A. et al. Phase space for the breakdown of the Quantum Hall effect in epitaxial graphene. Phys. Rev. Lett. 111, 096601 (2013).
    • (2013) Phys. Rev. Lett. , vol.111
    • Alexander-Webber, J.A.1
  • 31
    • 79951873658 scopus 로고    scopus 로고
    • A review of chemical vapour deposition of graphene on copper
    • Mattevi, C., Kim, H. & Chhowalla, M. A review of chemical vapour deposition of graphene on copper. J. Mater. Chem. 21, 3324-3334 (2011).
    • (2011) J. Mater. Chem. , vol.21 , pp. 3324-3334
    • Mattevi, C.1    Kim, H.2    Chhowalla, M.3
  • 32
    • 79960570509 scopus 로고    scopus 로고
    • Boron nitride substrates for high mobility chemical vapor deposited graphene
    • Gannett, W. et al. Boron nitride substrates for high mobility chemical vapor deposited graphene. Appl. Phys. Lett. 98, 242105 (2011).
    • (2011) Appl. Phys. Lett. , vol.98
    • Gannett, W.1
  • 33
    • 0000419430 scopus 로고
    • On the reaction of Pt with SiO2 substrates: Observation of the Pt3Si phase with the Cu3Au superstructure
    • Lamber, R. & Jaeger, N. I. On the reaction of Pt with SiO2 substrates: Observation of the Pt3Si phase with the Cu3Au superstructure. J. Appl. Phys. 70, 457-461 (1991).
    • (1991) J. Appl. Phys. , vol.70 , pp. 457-461
    • Lamber, R.1    Jaeger, N.I.2
  • 34
    • 0141792376 scopus 로고    scopus 로고
    • Silicide formation on a Pt/SiO2 model catalyst studied by TEM, EELS, and EDXS
    • Wang, D. et al. Silicide formation on a Pt/SiO2 model catalyst studied by TEM, EELS, and EDXS. J. Catalysis 219, 434-441 (2003).
    • (2003) J. Catalysis , vol.219 , pp. 434-441
    • Wang, D.1
  • 35
    • 17344376602 scopus 로고    scopus 로고
    • Platinum nanocrystals supported by silica, alumina and ceria: Metal-support interaction due to high-temperature reduction in hydrogen
    • Penner, S. et al. Platinum nanocrystals supported by silica, alumina and ceria: metal-support interaction due to high-temperature reduction in hydrogen. Surf. Sci. 532-535, 276-280 (2003).
    • (2003) Surf. Sci. , vol.532-535 , pp. 276-280
    • Penner, S.1
  • 36
    • 0027574789 scopus 로고
    • Dielectric degradation of Pt/SiO2/Si structures during thermal annealing
    • Tsui, B.-Y. & Chen, M.-C. Dielectric degradation of Pt/SiO2/Si structures during thermal annealing. Solid-State Electronics 36, 583-593 (1993).
    • (1993) Solid-State Electronics , vol.36 , pp. 583-593
    • Tsui, B.-Y.1    Chen, M.-C.2
  • 37
    • 0019535578 scopus 로고
    • Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems
    • Grunthaner, P. J., Grunthaner, F. J. & Madhukar, A. Chemical bonding and charge redistribution - valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems. J. Vac. Sci. Technol. 20, 680-683 (1982).
    • (1982) J. Vac. Sci. Technol. , vol.20 , pp. 680-683
    • Grunthaner, P.J.1    Grunthaner, F.J.2    Madhukar, A.3
  • 38
    • 0013032284 scopus 로고
    • XPS study of SiO thin-films and SiO metal interfaces
    • Nguyen, T. P. & Lefrant, S. XPS study of SiO thin-films and SiO metal interfaces. J. Phys. Condens. Mater. 1, 5197-5204 (1989).
    • (1989) J. Phys. Condens. Mater. , vol.1 , pp. 5197-5204
    • Nguyen, T.P.1    Lefrant, S.2
  • 39
    • 0025398710 scopus 로고
    • Anomalous solid-state reaction between SiC and Pt
    • Chou, T. C. Anomalous solid-state reaction between SiC and Pt. J. Mater. Res. 5, 601-608 (1990).
    • (1990) J. Mater. Res. , vol.5 , pp. 601-608
    • Chou, T.C.1
  • 40
    • 44249114819 scopus 로고    scopus 로고
    • Thermodynamic assessment of the Pt-Si binary system
    • Xu, L. L., Wang, J., Liu, H. S. & Jin, Z. P. Thermodynamic assessment of the Pt-Si binary system. Calphad 32, 101-105 (2008).
    • (2008) Calphad , vol.32 , pp. 101-105
    • Xu, L.L.1    Wang, J.2    Liu, H.S.3    Jin, Z.P.4
  • 41
    • 78751642669 scopus 로고    scopus 로고
    • Grains and grain boundaries in single-layer graphene atomic patchwork quilts
    • Huang, P. Y. et al. Grains and grain boundaries in single-layer graphene atomic patchwork quilts. Nature 469, 389-392 (2011).
    • (2011) Nature , vol.469 , pp. 389-392
    • Huang, P.Y.1
  • 42
    • 84858053578 scopus 로고    scopus 로고
    • Energy relaxation for hot Dirac fermions in graphene and breakdown of the quantum Hall effect
    • Baker, A. M. R., Alexander-Webber, J. A., Altebaeumer, T. & Nicholas, R. J. Energy relaxation for hot Dirac fermions in graphene and breakdown of the quantum Hall effect. Phys. Rev. B 85, 115403 (2012).
    • (2012) Phys. Rev. B , vol.85
    • Baker, A.M.R.1    Alexander-Webber, J.A.2    Altebaeumer, T.3    Nicholas, R.J.4
  • 43
    • 84905987994 scopus 로고    scopus 로고
    • Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
    • Lartsev, A. et al. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge. Appl. Phys. Lett. 105, 063106 (2014).
    • (2014) Appl. Phys. Lett. , vol.105
    • Lartsev, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.