SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 6, 2014, Pages

Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

(8) Lartsev, Arseniy a Yager, Tom a Bergsten, Tobias b Tzalenchuk, Alexander c,d Janssen, T J B M c Yakimova, Rositza e Lara Avila, Samuel a Kubatkin, Sergey a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b SP TECHNICAL RESEARCH INSTITUTE OF SWEDEN (Sweden)

c NATIONAL PHYSICAL LABORATORY (United Kingdom)

d UNIVERSITY OF LONDON (United Kingdom)

e LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CORONA; GRAPHENE; SILICON CARBIDE;

CORONA DISCHARGES; DIRAC POINT; ELECTROSTATIC POTENTIALS; EPITAXIAL GRAPHENE; QUANTUM METROLOGY; SEMICONDUCTOR INTERFACES; SIMPLE METHOD; TOPOLOGICAL INSULATORS;

CARRIER CONCENTRATION;

EID: 84905987994 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4892922 Document Type: Article

Times cited : (42)

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