Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene

ACS Nano

Volumn 7, Issue 2, 2013, Pages 1351-1359

  Murdock, Adrian T ^a   Koos, Antal ^a   Britton, T Ben ^a   Houben, Lothar ^b   Batten, Tim ^c   Zhang, Tong ^c   Wilkinson, Angus J ^a   Dunin Borkowski, Rafal E ^b   Lekka, Christina E ^d   Grobert, Nicole ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c RENISHAW PLC   (United Kingdom)

^d UNIVERSITY OF IOANNINA   (Greece)

Author keywords

crystallography; Cu; CVD; EBSD; graphene; orientation

Indexed keywords

BILAYER DOMAIN; CHEMICAL VAPOR DEPOSITION GRAPHENE; CRYSTALLOGRAPHIC ORIENTATIONS; CU SUBSTRATE; CU(1 1 1); EBSD; EDGE GEOMETRY; HIGH QUALITY; LOW-PRESSURE CONDITIONS; SINGLE LAYER; TWO DIRECTIONS; ZIGZAG EDGES;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; GEOMETRY; GRAIN BOUNDARIES; VAPORS;

GRAPHENE;

EID: 84874412574     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3049297     Document Type: Article

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