Electrically Tunable Bandgaps in Bilayer MoS2

Nano Letters

Volumn 15, Issue 12, 2015, Pages 8000-8007

  Chu, Tao ^a,b   Ilatikhameneh, Hesameddin ^a   Klimeck, Gerhard ^a   Rahman, Rajib ^a   Chen, Zhihong ^a  

^a PURDUE UNIVERSITY   (United States)

^b GLOBALFOUNDRIES Technology Development   (United States)

Author keywords

bilayer MoS2; dual gate FET; interlayer transition; photoluminescence; transition metal dichalcogenides (TMD); tunable bandgap

Indexed keywords

BAND STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; MOLYBDENUM COMPOUNDS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TRANSITION METALS;

BI-LAYER; DUAL-GATE FET; INTERLAYER TRANSITION; TRANSITION METAL DICHALCOGENIDES (TMD); TUNABLE BAND-GAP;

ENERGY GAP;

EID: 84949595488     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b03218     Document Type: Article

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