Achieving large transport bandgaps in bilayer graphene

Nano Research

Volumn 8, Issue 10, 2015, Pages 3228-3236

  Chu, Tao ^a   Chen, Zhihong ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

bilayer graphene; on off ratios; percolation; transport bandgap

Indexed keywords

EID: 84943359728     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-015-0823-x     Document Type: Article

References (24)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science2004, 306, 666–669.
2. Min, H.; Sahu, B. R.; Banerjee, S. K.; Macdonald, A. H. Ab initio theory of gate induced gaps in graphene bilayers. Phys. Rev. B2007, 75, 155115.
3. Mccann, E. Asymmetry gap in the electronic band structure of bilayer graphene. Phys. Rev. B2006, 74, 161403.
4. Castro, E. V.; Novoselov, K. S.; Morozov, S. V.; Peres, N. M. R.; dos Santos, J. M. B. L.; Nilsson, J.; Guinea, F.; Geim, A. K.; Neto, A. H. C. Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect. Phys. Rev. Lett.2007, 99, 216802.
5. Ohta, T.; Bostwick, A.; Seyller, T.; Horn, K.; Rotenberg, E. Controlling the electronic structure of bilayer graphene. Science.2006, 313, 951–954.
6. Zhang, Y. B.; Tang, T.-T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct observation of a widely tunable bandgap in bilayer graphene. Nature2009, 459, 820–823.
7. Zhang, L. M.; Li, Z. Q.; Basov, D. N.; Fogler, M. M.; Hao, Z.; Martin, M. C. Determination of the electronic structure of bilayer graphene from infrared spectroscopy results. Phys. Rev. B2008, 78, 235408.
8. Xia, F. N.; Farmer, D. B.; Lin, Y.-M.; Avouris, P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Lett.2010, 10, 715–718.
9. Yan, J.; Fuhrer, M. S. Charge transport in dual gated bilayer graphene with Corbino geometry. Nano Lett.2010, 10, 4521–4525.
10. Taychatanapat, T.; Jarillo-Herrero, P. Electronic transport in dual-gated bilayer graphene at large displacement fields. Phys. Rev. Lett.2010, 105, 166601.
11. Russo, S.; Craciun, M. F.; Yamamoto, M.; Tarucha, S.; Morpurgo, A. F. Double-gated graphene-based devices New J. Phys.2009, 11, 095018.
12. Craciun, M. F.; Russo, S.; Yamamoto, M.; Tarucha, S. Tuneable electronic properties in graphene. Nano Today2011, 6, 42–60.
13. Shioya, H.; Yamamoto, M Russo, S.; Craciun, M. F.; Tarucha, S. Gate tunable non-linear currents in bilayer graphene diodes. Appl. Phys. Lett.2012, 100, 033113.
14. Lin, J. H.; Fang, W. J.; Zhou, W.; Lupini, A. R.; Idrobo, J. C.; Kong, J.; Pennycook, S. J.; Pantelides, S. T. AC/AB stacking boundaries in bilayer graphene. Nano Lett.2013, 13, 3262–3268.
15. Malard, L. M.; Pimenta, M. A.; Dresselhaus, G.; Dresselhaus, M. S.; Elsevier, B.V. Raman spectroscopy in graphene. Phys. Rep.2009, 473, 51–87.
16. Kim, K.; Coh, S.; Tan, L. Z.; Regan, W.; Yuk, J. M.; Chatterjee, E.; Crommie, M. F.; Cohen, M. L.; Louie, S. G.; Zettl, A. Raman spectroscopy study of rotated double-layer graphene: Misorientation-angle dependence of electronic structure. Phys. Rev. Lett.2012, 108, 246103.
17. Alden, J. S.; Tsen, A. W.; Huang, P. Y.; Hovden, R.; Brown, L.; Park, J.; Muller, D. A.; McEuen, P. L. Strain solitons and topological defects in bilayer graphene. Proc. Natl. Acad. Sci. USA2013, 110, 11256–11260.
18. San-Jose, P.; Gorbachev, R. V.; Geim, A. K.; Novoselov, K. S.; Guinea, F. Stacking boundaries and transport in bilayer graphene. Nano Lett.2014, 14, 2052–2057.
19. Zou, K.; Zhang, F.; Clapp, C.; MacDonald, A. H.; Zhu, J. Transport studies of dual-gated ABC and ABA trilayer graphene: Band gap opening and band structure tuning in very large perpendicular electric field. Nano Lett.2013, 13, 369–373.
20. Martin, J.; Akerman, N.; Ulbricht, G.; Lohmann, T.; Smet, J. H.; Von Klitzing, K.; Yacoby, A. Observation of electron–hole puddles in graphene using a scanning single-electron transistor. Nat. Phys.2008, 4, 144–148.
21. Sui, Y.; Low, T.; Lundstrom, M.; Appenzeller, J. Signatures of disorder in the minimum conductivity of graphene. Nano Lett.2011, 11, 1319–1322.
22. Deshpande, A.; Bao, W.; Zhao, Z.; Lau, C. N.; LeRoy, B. J. Mapping the Dirac point in gated bilayer graphene. Appl. Phys. Lett.2009, 95, 243502.
23. Yu, W. J.; Duan, X. F. Tunable transport gap in narrow bilayer graphene nanoribbons. Sci. Rep.2013, 3, 1248.
24. Szafranek, B. N.; Fiori, G.; Schall, D.; Neumaier, D.; Kurz, H. Current saturation and voltage gain in bilayer graphene field effect transistors. Nano Lett.2012, 12, 1324–1328.