Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2

Nano Letters

Volumn 15, Issue 12, 2015, Pages 8377-8384

  Pradhan, Nihar R ^a   McCreary, Amber ^b,c   Rhodes, Daniel ^a,d   Lu, Zhengguang ^a,d   Feng, Simin ^b   Manousakis, Efstratios ^a,d   Smirnov, Dmitry ^a   Namburu, Raju ^c   Dubey, Madan ^c   Hight Walker, Angela R ^e   Terrones, Humberto ^f   Terrones, Mauricio ^b,g   Dobrosavljevic, Vladimir ^a,d   Balicas, Luis ^a  

^a FLORIDA STATE UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d Florida State University   (United States)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^f Rensselaer Polytechnic Institute   (United States)

^g SHINSHU UNIVERSITY   (Japan)

Author keywords

field effect mobilities; field effect transistor; metal insulator transition; Raman scattering; rhenium disulfide; Transition metal dichalcogenides

Indexed keywords

ANISOTROPY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY GAP; FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; METALS; OHMIC CONTACTS; PHASE TRANSITIONS; RAMAN SCATTERING; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLVENTS; TRANSISTORS; TRANSITION METALS;

ELECTRIC FIELD INDUCED; FIELD-EFFECT MOBILITIES; METAL-TO-INSULATOR TRANSITIONS; METALLIC INTERCONNECTS; OPTOELECTRONIC APPLICATIONS; QUANTUM PHASE TRANSITIONS; SEMICONDUCTING BEHAVIOR; TRANSITION METAL DICHALCOGENIDES;

METAL INSULATOR TRANSITION;

EID: 84949579905     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b04100     Document Type: Article

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