Modeling of the threshold voltage variation for a stressed submicronic MOSFET

Proceedings of the International Conference on Microelectronics, ICM

Volumn 2001-January, Issue , 2001, Pages 27-30

  Bouhdada, A ^a   Marrakh, R ^a  

^a FACULTÉ DES SCIENCES AIN CHOCK   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; INTERFACE STATES; MICROELECTRONICS; POISSON DISTRIBUTION; POISSON EQUATION; SURFACE DEFECTS;

DEFECTS DISTRIBUTION; FITTING PARAMETERS; GAUSSIAN PARAMETERS; INTERESTING INFORMATION; SIMULATION CURVES; STANDARD DEVIATION; THRESHOLD VOLTAGE MODELING; THRESHOLD VOLTAGE VARIATION;

THRESHOLD VOLTAGE;

EID: 84949185937     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2001.997478     Document Type: Conference Paper

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