New insight into the degradation mechanism of nitride spacer with different post-oxide in submicron LDD n-MOSFET's

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 B, 1998, Pages 1035-1040

  Yih, C M ^a   Wang, C L ^a   Chung, Steve S ^a   Wu, C C ^b   Tan, W ^b   Wu, H J ^b   Pi, S ^b   Huang, Daniel ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Hsinchu Science Based Park ^*  (Taiwan)

Author keywords

CVD oxide; Hot carrier reliability; Oxide charge generation; Silicon nitride spacer; Submicron LDD MOSFET

Indexed keywords

EID: 0001600335     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1035     Document Type: Article

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