Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressing

Semiconductor Science and Technology

Volumn 13, Issue 5, 1998, Pages 453-459

  Qin, W H ^a   Chim, W K ^a   Chan, D S H ^a   Lou, C L ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Hewlett Packard Singapore (Private) Limited   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000741471     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/5/003     Document Type: Article

References (19)

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