Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor

Microelectronics Journal

Volumn 28, Issue 1, 1997, Pages 85-91

  Bouhdada, A ^a   Bakkali, S ^a   Nouacry A ^a   Touhami, A ^a  

^a HASSAN II UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; SEMICONDUCTOR DEVICE MODELS;

TRANSISTOR AGING;

MOSFET DEVICES;

EID: 0030735659     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00046-8     Document Type: Article

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