Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents

Microelectronics Journal

Volumn 30, Issue 1, 1999, Pages 19-22

  Bouhdada, A ^a   Nouacry, A ^a   Bakkali, S ^a   Touhami, A ^a   Marrakh, R ^a  

^a FACULTÉ DES SCIENCES AIN CHOCK   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SUBSTRATES;

DRAIN CURRENTS; GATE OXIDES; TRANSISTOR AGING;

MOSFET DEVICES;

EID: 0032785598     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00073-1     Document Type: Article

References (12)

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