Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volumn 32, Issue 6, 2014, Pages

  Chen, Mikai ^a   Wi, Sungjin ^a   Nam, Hongsuk ^a   Priessnitz, Greg ^a   Liang, Xiaogan ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; ELECTRONIC PROPERTIES; MOLECULES; MOLYBDENUM COMPOUNDS; TRANSISTORS; WATER ABSORPTION;

AIR HUMIDITY CONDITIONS; DOPING PROCESS; EFFECTIVE SPACE; PLASMA DOPING PROCESS; PLASMA-INDUCED; TRANSFER CHARACTERISTICS; TRANSPORT CHARACTERISTICS; WATER MOLECULE;

FIELD EFFECT TRANSISTORS;

EID: 84949117447     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4897133     Document Type: Article

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