High carrier mobility on hydrogen terminated 〈100〉 diamond surfaces

Applied Physics Letters

Volumn 88, Issue 4, 2006, Pages 1-3

  Rezek, B ^a,b   Watanabe, H ^a   Nebel, C E ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIAMONDS; ELECTRIC CONDUCTIVITY; HYDROGEN; SURFACE STRUCTURE;

DIAMOND LAYERS; HOLE CONCENTRATION; PHONON SCATTERING;

CARRIER MOBILITY;

EID: 31544464122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168497     Document Type: Article

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