-
1
-
-
0347909053
-
-
edited by S. Saito, N. Fujimori, O. Fukunaga, M. Kamo, K. Kobashi, and M. Yoshikawa MYU, Tokyo
-
See, for example, J. T. Glass, D. L. Dreifus, R. E. Fauber, B. A. Fox, M. L. Hartsell, R. B. Henard, J. S. Holmes, D. Malta, L. S. Plano, A. J. Tessmer, G. J. Tessmer, and H. A. Wynand, in Proceedings of the Fourth International Conference on New Diamond Science and Technology, edited by S. Saito, N. Fujimori, O. Fukunaga, M. Kamo, K. Kobashi, and M. Yoshikawa (MYU, Tokyo, 1994), p. 355.
-
(1994)
Proceedings of the Fourth International Conference on New Diamond Science and Technology
, pp. 355
-
-
Glass, J.T.1
Dreifus, D.L.2
Fauber, R.E.3
Fox, B.A.4
Hartsell, M.L.5
Henard, R.B.6
Holmes, J.S.7
Malta, D.8
Plano, L.S.9
Tessmer, A.J.10
Tessmer, G.J.11
Wynand, H.A.12
-
2
-
-
0026976371
-
-
Appearance of this layer depends on a cooling down procedure after diamond film deposition. Cooling down in oxygen-containing atmosphere leads to an increase in resistivity of the films. See, for example, Y. Mori, A. Hatta, T. Ito, and A. Hiraki, Jpn. J. Appl. Phys. 1 31, L1718 (1992).
-
(1992)
Jpn. J. Appl. Phys. 1
, vol.31
-
-
Mori, Y.1
Hatta, A.2
Ito, T.3
Hiraki, A.4
-
3
-
-
0025385797
-
-
S. A. Grot, G. Sh. Gildenblat, C. W. Hatfield, C. R. Wronski, A. R. Badzian, T. Badzian, and R. Messier, IEEE Electron Device Lett. 11, 100 (1990).
-
(1990)
IEEE Electron Device Lett.
, vol.11
, pp. 100
-
-
Grot, S.A.1
Gildenblat, G.Sh.2
Hatfield, C.W.3
Wronski, C.R.4
Badzian, A.R.5
Badzian, T.6
Messier, R.7
-
8
-
-
0026932016
-
-
T. Maki, S. Shikama, M. Komori, Y. Sakaguchi, K. Sakuta, and T. Kobayashi, Jpn. J. Appl. Phys. 1 31, L1446 (1992).
-
(1992)
Jpn. J. Appl. Phys. 1
, vol.31
-
-
Maki, T.1
Shikama, S.2
Komori, M.3
Sakaguchi, Y.4
Sakuta, K.5
Kobayashi, T.6
-
9
-
-
0028415963
-
-
H. Kawarada, M. Aoki, H. Sasaki, and K. Tsugawa, Diam. Relat. Mater. 3, 961 (1994).
-
(1994)
Diam. Relat. Mater.
, vol.3
, pp. 961
-
-
Kawarada, H.1
Aoki, M.2
Sasaki, H.3
Tsugawa, K.4
-
10
-
-
0000246502
-
-
H. Kiyota, E. Matsushima, K. Sato, H. Okushi, T. Ando, M. Kamo, Y. Sato, and M. Iida, Appl. Phys. Lett. 67, 3596 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3596
-
-
Kiyota, H.1
Matsushima, E.2
Sato, K.3
Okushi, H.4
Ando, T.5
Kamo, M.6
Sato, Y.7
Iida, M.8
-
11
-
-
0001747031
-
-
K. Hayashi, S. Yamanaka, H. Okushi, and Kajimura, Appl. Phys. Lett. 68, 376 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 376
-
-
Hayashi, K.1
Yamanaka, S.2
Okushi, H.3
Kajimura4
-
12
-
-
0000488001
-
-
K. Hayashi, H. Watanabe, S. Yamanaka, H. Okushi, K. Kajimura, and T. Sekiguchi, Appl. Phys. Lett. 69, 1122 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 1122
-
-
Hayashi, K.1
Watanabe, H.2
Yamanaka, S.3
Okushi, H.4
Kajimura, K.5
Sekiguchi, T.6
-
15
-
-
0001312821
-
-
Y. Muto, T. Sugino, J. Shirafuji, and K. Kobashi, Appl. Phys. Lett. 59, 843 (1991).
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 843
-
-
Muto, Y.1
Sugino, T.2
Shirafuji, J.3
Kobashi, K.4
-
18
-
-
21544433109
-
-
G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 656
-
-
Higashi, G.S.1
Chabal, Y.J.2
Trucks, G.W.3
Raghavachari, K.4
-
20
-
-
85033319265
-
-
edited by L. S. Pan and D. R. Kania Kluwer Academic, Boston, Chap. 2
-
B. Pate, in Diamond: Electronic Properties and Applications, edited by L. S. Pan and D. R. Kania (Kluwer Academic, Boston, 1995), Chap. 2.
-
(1995)
Diamond: Electronic Properties and Applications
-
-
Pate, B.1
-
21
-
-
85033314907
-
-
note
-
In addition to various models attributed to hydrogen, some researchers pointed out, based on the analysis of Raman scattering spectra, the contribution of amorphous carbon to this conductivity of as-grown diamond surfaces (Refs. 3 and 15); however, Kawarada et al. (Ref. 14) and Stallcup et al. (Ref. 16) observed STS spectra with the p-type conduction on the 2×1 reconstructed diamond surfaces, indicating this p-type conduction originates from the diamond phase.
-
-
-
-
26
-
-
0003546026
-
-
Clarendon, Oxford, Chap. 3
-
E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), Chap. 3.
-
(1988)
Metal-Semiconductor Contacts, 2nd Ed.
-
-
Rhoderick, E.H.1
Williams, R.H.2
-
31
-
-
0000736150
-
-
Amsterdam
-
A. A. Gippius, V. S. Vavilov, A. M. Zaitsev, and B. S. Zaitsev, and B. S. Zhakupbekov, Physica (Amsterdam) 116B, 187 (1983).
-
(1983)
Physica
, vol.116 B
, pp. 187
-
-
Gippius, A.A.1
Vavilov, V.S.2
Zaitsev, A.M.3
Zaitsev, B.S.4
Zhakupbekov, B.S.5
-
32
-
-
0001270298
-
-
V. S. Vavilov, A. A. Gippius, A. M. Zaitsev, B. V. Deryagin, B. V. Spitsyn, and A. E. Aleksenko, Sov. Phys. Semicond. 14, 1078 (1980).
-
(1980)
Sov. Phys. Semicond.
, vol.14
, pp. 1078
-
-
Vavilov, V.S.1
Gippius, A.A.2
Zaitsev, A.M.3
Deryagin, B.V.4
Spitsyn, B.V.5
Aleksenko, A.E.6
-
33
-
-
0029379126
-
-
W. Zhang, B. Hu, E. Xie, Y. Zhang, L. Han, Z. Song, and G. Chem. J. Mater. Res. 10, 2350 (1995).
-
(1995)
J. Mater. Res.
, vol.10
, pp. 2350
-
-
Zhang, W.1
Hu, B.2
Xie, E.3
Zhang, Y.4
Han, L.5
Song, Z.6
Chem, G.7
-
34
-
-
0001172477
-
-
E. Holzschuh, W. Kündig, P. F. Meier, B. D. Patterson, J. P. F. Sellschop, M. C. Stemmet, and H. Appel. Phys. Rev. A 25, 1272 (1982).
-
(1982)
Phys. Rev. A
, vol.25
, pp. 1272
-
-
Holzschuh, E.1
Kündig, W.2
Meier, P.F.3
Patterson, B.D.4
Sellschop, J.P.F.5
Stemmet, M.C.6
Appel, H.7
|