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Volumn 34, Issue 1, 2016, Pages

Fast spatial atomic layer deposition of Al2O3 at low temperature (<100 °c) as a gas permeation barrier for flexible organic light-emitting diode displays

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; CHEMICAL ANALYSIS; DEPOSITION; ELECTRON SPECTROSCOPY; FIELD EMISSION MICROSCOPES; FILM PREPARATION; FLEXIBLE DISPLAYS; GAS PERMEABLE MEMBRANES; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SCANNING ELECTRON MICROSCOPY; SPECTROMETERS; SUBSTRATES; TEMPERATURE; THIN FILMS; THROUGHPUT;

EID: 84947983011     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.4934752     Document Type: Article
Times cited : (38)

References (22)
  • 19
    • 84885156436 scopus 로고    scopus 로고
    • Atomic layer deposition of noble metals - New developments in nanostructured catalysts
    • edited by Y.-H. Su (InTech, Rijeka, Croatia)
    • J. Lu, Y. Lei, and J. W. Elam, " Atomic layer deposition of noble metals-New developments in nanostructured catalysts," in Noble Metals, edited by Y.-H. Su (InTech, Rijeka, Croatia, 2012).
    • (2012) Noble Metals
    • Lu, J.1    Lei, Y.2    Elam, J.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.