A new approach to model the I∼V characteristics for nanoscale MOSFETs

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn 2003-January, Issue , 2003, Pages 265-268

  Pattanaik, Manisha ^a   Banerjee, Swapna ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTECHNOLOGY;

CARRIER VELOCITY SATURATION; CHANNEL LENGTH; CURRENT-VOLTAGE MODELS; HIGH FIELD; MOS-FET; NANOSCALE MOSFETS; NEW APPROACHES;

MOSFET DEVICES;

EID: 84944676571     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2003.1252604     Document Type: Conference Paper

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