Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III-V Buckled Honeycombs

Nano Letters

Volumn 15, Issue 10, 2015, Pages 6568-6574

  Crisostomo, Christian P ^a,c   Yao, Liang Zi ^a,c   Huang, Zhi Quan ^a,c   Hsu, Chia Hsiu ^a,c   Chuang, Feng Chuan ^a,c   Lin, Hsin ^b,c   Albao, Marvin A ^c,d   Bansil, Arun ^c,e  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b National University of Singapore   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d UNIVERSITY OF THE PHILIPPINES LOS BAÑOS   (Philippines)

^e NORTHEASTERN UNIVERSITY   (United States)

Author keywords

2D topological insulators; electronic structures; first principles calculations; III V semiconductor thin films; quantum spin Hall effect; topological phase transition

Indexed keywords

CALCULATIONS; ELECTRIC INSULATORS; ELECTRONIC STRUCTURE; ENERGY GAP; FILMS; GALLIUM ALLOYS; HONEYCOMB STRUCTURES; HYDROGENATION; QUANTUM HALL EFFECT; SUBSTRATES; THIN FILMS; TOPOLOGY;

FIRST-PRINCIPLES CALCULATION; II-IV SEMICONDUCTORS; QUANTUM SPIN HALL EFFECT; TOPOLOGICAL INSULATORS; TOPOLOGICAL PHASE;

SPIN HALL EFFECT;

EID: 84944350819     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b02293     Document Type: Article

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