Gated silicene as a tunable source of nearly 100% spin-polarized electrons

Nature Communications

Volumn 4, Issue , 2013, Pages

  Tsai, Wei Feng ^a   Huang, Cheng Yi ^a   Chang, Tay Rong ^b   Lin, Hsin ^c   Jeng, Horng Tay ^b,d   Bansil, A ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NORTHEASTERN UNIVERSITY   (United States)

^d INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICENE; SILICONE; UNCLASSIFIED DRUG;

CRYSTAL STRUCTURE; DESIGN; ELECTRIC FIELD; ELECTRON; MAGNETIC FIELD; POLARIZATION; QUANTUM MECHANICS; SILICON;

ARTICLE; CHEMICAL STRUCTURE; ELECTRON; MAGNETIC FIELD; POLARIZATION; ROOM TEMPERATURE;

EID: 84874585234     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2525     Document Type: Article

References (39)

1. Awschalom, D. D. & Flatt, M. E. Challenges for semiconductor spintronics. Nat. Phys. 3, 153-159 (2007)
2. Awschalom, D. D. & Samarth, N. Spintronics without magnetism. Physics 2, 50-54 (2009)
3. Zutic, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323-410 (2004) (Pubitemid 39063520)
4. Yazyev, O. V., Moore, J. E. & Louie, S. G. Spin polarization and transport of surface states in the topological insulators Bi2 Se3 and Bi2 Te3 from first principles. Phys. Rev. Lett. 105, 266806 (2010)
5. Castro Neto, A. H. et al. The electronic properties of graphene. Rev. Mod. Phys. 81, 109-162 (2009)
6. Takeda, K. & Shiraishi, K. Theoretical possibility of stage corrugation in Si and Ge analogs of graphite. Phys. Rev. B 50, 14916-14922 (1994)
7. Guzman-Verri, G. G., Lew Yan Voon Electronic structure of silicon-based nanostructures. Phys. Rev. B 76, 075131 (2007)
8. Cahangirov, S. et al. Two-and one-dimensional honeycomb structures of silicon and germanium. Phys. Rev. Lett. 102, 236804 (2009)
9. Lin, C.-L. et al. Structure of silicene grown on Ag(111). Appl. Phys. Expr. 5, 045802 (2012)
10. Aufray, B. et al. Graphene-like silicon nanoribbons on Ag(110): a possible formation of silicene. Appl. Phys. Lett. 96, 183102 (2010)
11. Lalmi, B. et al. Epitaxial growth of a silicene sheet. Appl. Phys. Lett. 97, 223109 (2010)
12. Jamgotchian, H. et al. Growth of silicene layers on Ag(111): unexpected effect of the substrate temperature. J. Phys. : Condens. Matter 24, 172001 (2012)
13. Fleurence, A. et al. Experimental evidence for epitaxial silicene on diboride thin films. Phys. Rev. Lett. 108, 245501 (2012)
14. Vogt, P. et al. Silicene: compelling experimental evidence for graphenelike two-dimensional silicon. Phys. Rev. Lett. 108, 155501 (2012)
15. Le Lay, G. et al. Epitaxial silicene: can it be strongly strained? J. Phys. D: Appl. Phys. 45, 392001 (2012)
16. Arafune, R. et al. Structural transition of silicene on Ag(111). Surf. Sci. 608, 297-300 (2013)
17. Liu, C.-C., Feng, W. & Yao, Y. Quantum spin hall effect in silicene and twodimensional Germanium. Phys. Rev. Lett. 107, 076802 (2011)
18. Liu, C.-C., Jiang, H. & Yao, Y. Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin. Phys. Rev. B 84, 195430 (2011)
19. Drummond, N. D., Zolyomi, V. & Fal'ko, V. I. Electrically tunable band gap in silicene. Phys. Rev. B 85, 075423 (2012)
20. Zhou, S. Y. et al. Substrate-induced bandgap opening in epitaxial graphene. Nat. Mater. 6, 770-775 (2007) (Pubitemid 47511278)
21. Papagno, M. et al. Large band gap opening between graphene Dirac cones induced by Na adsorption onto an Ir superlattice. ACS Nano 6, 199-204 (2012)
22. Lahiri, J., Lin, Y., Bozkurt, P., Oleynik, I. I. & Batzill, M. An extended defect in graphene as a metallic wire. Nat. Nanotech. 5, 326-329 (2010)
23. Rycerz, A., Tworzydlo, J. & Beenakker, C. W. J. Valley filter and valley valve in graphene. Nat. Phys. 3, 172-175 (2007)
24. Gunlycke, D. & White, C. T. Graphene valley filter using a line defect. Phys. Rev. Lett. 106, 136806 (2011)
25. Recher, P. & Trauzettel, B. A defect controls transport in graphene. Physics 4, 25 (2011)
26. Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotech. 7, 490-493 (2012)
27. Zhu, Z. Y., Cheng, Y. C. & Schwingenschlogl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011)
28. Kane, C. L. & Mele, E. J. Z2 topological order and the quantum spin hall effect. Phys. Rev. Lett. 95, 146802 (2005)
29. Kane, C. L. & Mele, E. J. Quantum spin hall effect in graphene. Phys. Rev. Lett. 95, 226801 (2005)
30. Fu, L. & Kane, C. L. Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007)
31. Ezawa, M. Valley-polarized metals and quantum anomalous Hall effect in silicene. Phys. Rev. Lett. 109, 055502 (2012)
32. Ando, T. Quantum point contacts in magnetic fields. Phys. Rev. B 44, 8017-8027 (1991)
33. Fujita, M., Wakabayashi, K., Nakada, K. & Kusakabe, K. Peculiar localized state at zigzag graphite edge. J. Phys. Soc. Japan 65, 1920-1923 (1996)
34. Nakada, K. et al. Edge state in graphene ribbons: nanometer size effect and edge shape dependence. Phys. Rev. B 54, 17954-17961 (1996)
35. Ding, J., Qiao, Z., Feng, W., Yao, Y. & Niu, Q. Magnetic and electronic properties of metal-atom adsorbed graphene. Phys. Rev. B 84, 195444 (2011)
36. Xiao, D., Yao, W. & Niu, Q. Valley-contrasting physics in graphene: magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007)
37. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865-3868 (1996) (Pubitemid 126631804)
38. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758-1775 (1999)
39. Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15-50 (1996). (Pubitemid 126412269)