Growth parameters for thin film InBi grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 43, Issue 4, 2014, Pages 914-920

  Keen, B ^a   Makin, R ^a   Stampe, P A ^b   Kennedy, R J ^b   Sallis, S ^c   Piper, L J ^c,d   McCombe, B ^a   Durbin, S M ^a,e  

^a UNIVERSITY AT BUFFALO   (United States)

^b FLORIDA A AND M UNIVERSITY   (United States)

^c State University of New York   (United States)

^d BINGHAMTON UNIVERSITY   (United States)

^e Western Michigan University   (United States)

Author keywords

AlBi; bismide; GaBi; InBi; Molecular beam epitaxy (MBE)

Indexed keywords

ALUMINUM ALLOYS; BINARY ALLOYS; BISMUTH COMPOUNDS; CRYSTALLINITY; DENSITY FUNCTIONAL THEORY; ENERGY GAP; FILM GROWTH; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

ALBI; BISMIDE; BULK CRYSTALS; FILM CRYSTALLINITY; GAAS SUBSTRATES; GABI; GROWTH PARAMETERS; INBI;

THIN FILMS;

EID: 84899060530     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-014-3006-8     Document Type: Article

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