Prediction of large-gap two-dimensional topological insulators consisting of bilayers of group III elements with Bi

Nano Letters

Volumn 14, Issue 5, 2014, Pages 2505-2508

  Chuang, Feng Chuan ^a   Yao, Liang Zi ^a   Huang, Zhi Quan ^a   Liu, Yu Tzu ^a   Hsu, Chia Hsiu ^a   Das, Tanmoy ^b   Lin, Hsin ^b   Bansil, Arun ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NORTHEASTERN UNIVERSITY   (United States)

Author keywords

2D topological insulators; electronic structures; first principles calculations; III V semiconductor thin films; quantum spin Hall effect; topological phase transition

Indexed keywords

CALCULATIONS; ELECTRIC INSULATORS; ELECTRONIC STRUCTURE; HONEYCOMB STRUCTURES; TOPOLOGY;

FIRST-PRINCIPLES CALCULATION; II-IV SEMICONDUCTORS; QUANTUM SPIN HALL EFFECT; TOPOLOGICAL INSULATORS; TOPOLOGICAL PHASE;

TWO DIMENSIONAL;

EID: 84900483700     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl500206u     Document Type: Article

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