Strain driven topological phase transitions in atomically thin films of group IV and v elements in the honeycomb structures

New Journal of Physics

Volumn 16, Issue , 2014, Pages

  Huang, Zhi Quan ^a   Hsu, Chia Hsiu ^a   Chuang, Feng Chuan ^a   Liu, Yu Tzu ^a,b   Lin, Hsin ^b   Su, Wan Sheng ^c,f   Ozolins, Vidvuds ^d   Bansil, Arun ^e  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b National University of Singapore   (Singapore)

^c NATIONAL CENTER FOR HIGH PERFORMANCE COMPUTING   (Taiwan)

^d Engineering IV   (United States)

^e NORTHEASTERN UNIVERSITY   (United States)

^f NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

2D topological insulators; electronic structures; first principles calculations; quantum spin Hall effect

Indexed keywords

CALCULATIONS; ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GERMANIUM; HONEYCOMB STRUCTURES; LEAD; METALS; PHASE DIAGRAMS; QUANTUM HALL EFFECT; SPIN HALL EFFECT; TOPOLOGY;

FIRST-PRINCIPLES CALCULATION; QUANTUM SPIN HALL EFFECT; SPIN-ORBIT COUPLINGS; TOPOLOGICAL BANDS; TOPOLOGICAL CHARACTERISTICS; TOPOLOGICAL INSULATORS; TOPOLOGICAL PHASE; TWO DIMENSIONAL (2 D);

TENSILE STRAIN;

EID: 84910136429     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/16/10/105018     Document Type: Article

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