SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 528, Issue , 2013, Pages 77-81

Deposition cycle of atomic layer deposition HfO2 film: Effects on electrical performance and reliability

(3) Cheng, Yi Lung a Hsieh, Cheng Yang a Chang, You Ling a

a NATIONAL CHI NAN UNIVERSITY (Taiwan)

Author keywords

AC; ALD; Electrical characteristics; HfO2; High k; Reliability

Indexed keywords

ALD; BREAKDOWN BEHAVIOR; CONSTANT VOLTAGE STRESS; DEPOSITION CYCLES; EFFECTIVE CHARGE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; FAILURE TIME; HFO2; HIGH-K; LIFETIME ENHANCEMENT; OXIDATION PROCESS; PHYSICAL THICKNESS; RELIABILITY CHARACTERISTICS; THERMAL-ANNEALING;

ACTINIUM; ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; ELECTRIC PROPERTIES; GATE DIELECTRICS; RELIABILITY;

HAFNIUM OXIDES;

EID: 84872955830 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.09.089 Document Type: Conference Paper

Times cited : (11)

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