High efficiency triple junction thin film silicon solar cells with optimized electrical structure

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 10, 2015, Pages 1313-1322

  Liu, Bofei ^a   Bai, Lisha ^a   Chen, Ze ^a   Zhang, Xiaodan ^a   Zhang, Dekun ^a   Ni, Jian ^a   Huang, Qian ^a   Wei, Changchun ^a   Sun, Jian ^a   Chen, Xinliang ^a   Ren, Huizhi ^a   Hou, Guofu ^a   Wang, Guangcai ^a   Zhao, Ying ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

a Si:H a SiGe:H c Si:H; multi junction solar cell; open circuit voltage loss; p i n; triple junction solar cell; tunnel recombination junction

Indexed keywords

ACTIVATION ENERGY; ALUMINUM OXIDE; II-VI SEMICONDUCTORS; MULTI-JUNCTION SOLAR CELLS; OPEN CIRCUIT VOLTAGE; OPTICAL FILMS; OXIDE MINERALS; THIN FILM SOLAR CELLS; TRANSPARENT CONDUCTING OXIDES; TUNNEL JUNCTIONS; WET ETCHING; ZINC OXIDE;

A-SI:H; ALUMINUM DOPED ZINC OXIDES (ZNO:AL); DOUBLE-JUNCTION SOLAR CELLS; OPEN CIRCUIT VOLTAGE LOSS; SINGLE JUNCTION SOLAR CELLS; THIN-FILM SILICON SOLAR CELLS; TRIPLE JUNCTION SOLAR CELLS; TUNNEL RECOMBINATION JUNCTIONS;

SILICON SOLAR CELLS;

EID: 84941735228     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2564     Document Type: Article

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