Hole diffusion at the recombination junction of thin film tandem solar cells and its effect on the illuminated current–voltage characteristic

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2853-2861

  Palit, N ^a   Dasgupta, A ^a   Ray, S ^a   Chatterjee, P ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ACTIVATION ENERGY; CONVERSION EFFICIENCY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC FIELDS; HYDROGENATION; MICROCRYSTALLINE SILICON; QUANTUM CHEMISTRY; SILICON CARBIDE; SILICON SOLAR CELLS; THIN FILM SOLAR CELLS; THIN FILMS;

DOUBLE-JUNCTION SOLAR CELLS; EFFICIENCY CHARACTERISTIC; HOLE TRANSPORT MECHANISM; HYDROGENATED MICROCRYSTALLINE SILICON; LOW-ACTIVATION ENERGY; MULTI-JUNCTION STRUCTURES; RECOMBINATION LAYERS; TRANSPORT MECHANISM;

AMORPHOUS SILICON;

EID: 84984553244     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1287115     Document Type: Article

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