Band-gap profiling in amorphous silicon-germanium solar cells

Applied Physics Letters

Volumn 80, Issue 9, 2002, Pages 1655-1657

  Lundszien, Dietmar ^a   Finger, Friedhelm ^a   Wagner, Heribert ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BAND GAPS; COMMON MODELS; FILL FACTOR; SILICON GERMANIUM;

BUFFER LAYERS; GERMANIUM; OPEN CIRCUIT VOLTAGE; SILICON ALLOYS;

AMORPHOUS SILICON;

EID: 79955995981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456548     Document Type: Article

References (6)

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