Role of bandgap grading for the performance of a-SiGe:H based solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 1133-1136

  Foelsch, J ^a   Stiebig, H ^a   Finger, F ^a   Rech, B ^a   Lundszien, D ^a   Lambertz, A ^a   Wagner, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEGRADATION; ENERGY GAP; INDUSTRIAL APPLICATIONS; INTERFACES (MATERIALS); LIGHTING; PERFORMANCE; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SHORT CIRCUIT CURRENTS;

AMORPHOUS SILICON GERMANIUM BASED SOLAR CELLS; BANDGAP DESIGN; BANDGAP DISCONTINUITIES; BANDGAP GRADING; PROFILING;

SILICON SOLAR CELLS;

EID: 0030399920     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)