Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 423-429

  Merten, J ^a   Asensi, J M ^a,b   Voz, C ^a,b   Shah, A V ^a   Platz, R ^b   Andreu, J ^b  

^a UNIVERSITY OF BARCELONA   (Spain)

^b Institut de Microtechnique   (Switzerland)

Author keywords

Amorphous silicon solar cells and modules; Analytical model, i(v) characteristics; Jur product degradation; Outdoor measurements; Recombination

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; PHOTOELECTRICITY; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

HYDROGENATED AMORPHOUS SILICON SOLAR CELLS; PHOTOCURRENTS; RECOMBINATION LOSSES;

SILICON SOLAR CELLS;

EID: 0032001720     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658676     Document Type: Article

References (13)

1. [ l ] M. A. Green, Solar Cells-Operating Principles, Technology and System Application. Univ. of New South Wales, Kensington, 1992.
2. H. G.Wagemann and H. Estrich, Grundlagen der photovoltaischen Energiewandlung. Stuttgart, Germany: Teubner, 1994.
3. W. Kusian, H. Pfleiderer, and W. Jürgens, "Buffer layer and light degradation of a-Si pin solar cells," in Proc. 9th E.C. Photovoltaic Solar Energy Conf., 1989, pp. 52-55.
4. J. Hubin and A. V. Shah, "Effect of recombination function on the collection in a p-i-n solar cell," Philos. Mag. B, vol. 72, no. 6, pp. 589-599, 1995.
5. R. Platz, D. Fischer, C. Hof, S. Dubail, J. Meier, U. Kroll, and A. Shah, "H2-dilution versus buffer layers for increased Voc," in Proc. Mater. Res. Soc. Symp., 1996, vol. 420, pp. 51-56.
6. J. Hubin, A. V. Shah, and E. Sauvain, "Effects of dangling bonds on the recombination function in amorphous semiconductors," Philos. Mag. Lett., vol. 66, pp. 115-125, 1992.
7. N. Beck, N. Wyrsch, C. Hof, and A. V. Shah, "Mobility lifetime product-a tool for correlating a-Si:H film properties and solar cell performance," J. Appl. Phys., vol. 79, pp. 9361-9367, 1996.
8. J. M. Asensi, J. Andreu, J. Puigdollers, and J. Bertomeu, "Interface effects in amorphous silicon solar cells," in Proc. 11th E.C. Photovoltaic Solar Energy Conf., 1992, pp. 769-772.
9. J. Merten, Photovoltaics with Amorphous Silicon: Technological, Physical and Technical Aspects, Ph.D. dissertation, Universität de Barcelona, Barcelona, Spain, 1996.
10. S. Nonomura, Y. Hamakawa, and H. Okamoto, "Determination of the built-in potential in a-Si solar-cells by means of electro-absorption method," Jpn. J. Appl. Phys.: Part II-Letters, vol. 21, pp. L464-L466, 1982.
11. L. Jiang, Q. Wang, E. Schiff, S. Guha, Y. Yang, and X. Ding, "Electro absorption measurements and built-in potentials in amorphous silicon pin solar cells," submitted for publication.
12. D. L. Staebler and C. R. Wronski, "Reversible conductivity changes in discharge-produced amorphous silicon," Appl. Phys. Lett., vol. 31, pp. 292-294, 1977.
13. T. Eickhoff, H. Striebig, W. Raetz, B. Rech, and H. Wagner, "Temperature dependence of a-Si:h solar cell prameters-Experiment and numerical simulations," in Proc. 13th Int. Photovoltaic Science and Engineering Conf., 1995, p. 238.