In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

Nano Letters

Volumn 15, Issue 9, 2015, Pages 5667-5672

  Chenet, Daniel A ^a   Aslan, O Burak ^b   Huang, Pinshane Y ^b   Fan, Chris ^a   Van Der Zande, Arend M ^a,c   Heinz, Tony F ^b,d,e   Hone, James C ^a  

^a Columbia University ^*  (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d STANFORD UNIVERSITY   (United States)

^e SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

2 D material; anisotropic; polarized Raman spectroscopy; ReS2; Rhenium disulfide; STEM; transition metal dichalcogenide

Indexed keywords

ANISOTROPY; CRYSTALLOGRAPHY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM COMPOUNDS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STEM (SCIENCE, TECHNOLOGY, ENGINEERING AND MATHEMATICS); SULFUR COMPOUNDS; TRANSITION METALS;

ANISOTROPIC; CRYSTALLOGRAPHIC ORIENTATIONS; FREQUENCY DIFFERENCES; IN-PLANE ANISOTROPY; POLARIZED RAMAN SPECTROSCOPY; RES2; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TRANSITION METAL DICHALCOGENIDES;

RHENIUM COMPOUNDS;

EID: 84941138623     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00910     Document Type: Article

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