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Volumn 652, Issue , 2015, Pages 167-171

Formation of low resistance Ti/Al-based ohmic contacts on (11-22) semipolar n-type GaN

Author keywords

Light emitting diode; Ohmic contact; Semipolar GaN; Ti Al

Indexed keywords

ANNEALING; ELECTRIC CONTACTORS; LIGHT EMITTING DIODES; OHMIC CONTACTS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84941091273     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2015.08.181     Document Type: Article
Times cited : (9)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.