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Journal of Polymer Science, Part A: Polymer Chemistry

Volumn 53, Issue 2, 2015, Pages 344-352

Design of high-χ block copolymers for lithography

(12) Durand, William J a Blachut, Gregory a Maher, Michael J b Sirard, Stephen c Tein, Summer a Carlson, Matthew C a Asano, Yusuke b Zhou, Sunshine X a Lane, Austin P a Bates, Christopher M b Ellison, Christopher J a Willson, C Grant a,b

a The University of Texas at Austin (United States)

b University of Texas at Austin (United States)

c LAM RESEARCH CORPORATION (United States)

Author keywords

block copolymers; interaction parameter; lithography; reactive ion etching; self assembly

Indexed keywords

LITHOGRAPHY; MEAN FIELD THEORY; ORDER DISORDER TRANSITIONS; REACTIVE ION ETCHING; SELF ASSEMBLY; SILICON; STYRENE; X RAY SCATTERING;

IMAGE FIDELITY; INTERACTION PARAMETERS; METHOXY; PATTERN FIDELITY; POLYMERIC SURFACES; REFERENCE MATERIAL;

BLOCK COPOLYMERS;

EID: 84940840376 PISSN: 0887624X EISSN: 10990518 Source Type: Journal
DOI: 10.1002/pola.27370 Document Type: Article

Times cited : (140)

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