Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication

ACS Nano

Volumn 8, Issue 5, 2014, Pages 5227-5232

  Tsai, Hsinyu ^a   Pitera, Jed W ^b   Miyazoe, Hiroyuki ^a   Bangsaruntip, Sarunya ^a   Engelmann, Sebastian U ^a   Liu, Chi Chun ^c   Cheng, Joy Y ^b   Bucchignano, James J ^a   Klaus, David P ^a   Joseph, Eric A ^a   Sanders, Daniel P ^b   Colburn, Matthew E ^c   Guillorn, Michael A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c IBM RESEARCH   (United States)

Author keywords

block copolymer; directed self Assembly; FinFET scaling; graphoepitaxy

Indexed keywords

BLOCK COPOLYMERS; FINS (HEAT EXCHANGE); LAMELLAR STRUCTURES; MONTE CARLO METHODS; SELF ASSEMBLY; SILICON; TWO DIMENSIONAL;

CIRCUIT FABRICATION; COMPLEX PATTERN; DIRECTED SELF-ASSEMBLY; FINFET SCALING; GRAPHOEPITAXY; IMAGE FORMATION MECHANISMS; LAMELLAR PHASE; TWO-DIMENSIONAL PATTERNS;

INTEGRATED CIRCUITS;

EID: 84901684235     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501300b     Document Type: Article

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