Contact resistance reduction using Fermi level de-pinning layer for MoS2 FETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2015-February, Issue February, 2015, Pages 5.1.1-5.1.4

  Park, Woojin ^a   Kim, Yonghun ^a   Lee, Sang Kyung ^a   Jung, Ukjin ^a   Yang, Jin Ho ^a   Cho, Chunhum ^a   Kim, Yun Ji ^a   Lim, Sung Kwan ^a   Hwang, In Seol ^b   Lee, Han Bo Ram ^b   Lee, Byoung Hun ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SolarLight Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SCHOTTKY BARRIER DIODES; TITANIUM DIOXIDE;

CRITICAL CHALLENGES; DEVICE APPLICATION; DOPING TECHNIQUES; PINNING LAYERS; REFERENCE DATA; RESISTANCE REDUCTION; SCHOTTKY BARRIER HEIGHTS;

CONTACT RESISTANCE;

EID: 84938226648     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2014.7046986     Document Type: Conference Paper

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