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Volumn 32, Issue 8, 2011, Pages 1047-1049

A simple series resistance extraction methodology for advanced CMOS devices

Author keywords

Series resistance

Indexed keywords

ADVANCED CMOS DEVICE; DEVICE UNDER TEST; EXTERNAL RESISTANCE; EXTERNAL RESISTORS; SERIES RESISTANCES;

EID: 79960898583     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2158183     Document Type: Article
Times cited : (77)

References (15)
  • 1
    • 0023310827 scopus 로고
    • The impact of intrinsic series resistance on MOSFET scaling
    • Mar.
    • K. K. Ng and W. T. Lynch, "The impact of intrinsic series resistance on MOSFET scaling," IEEE Trans. Electron Devices, vol. ED-34, no. 3, pp. 503-511, Mar. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.3 , pp. 503-511
    • Ng, K.K.1    Lynch, W.T.2
  • 2
    • 0034452659 scopus 로고    scopus 로고
    • Advanced model and analysis for series resistance in sub-100nm CMOS including poly depletion and overlap doping gradient effect
    • S. D. Kim, C.-M. Park, and J. C. S. Woo, "Advanced model and analysis for series resistance in sub-100 nm CMOS including poly-depletion and overlap doping gradient effect," in IEDM Tech. Dig., 2000, pp. 723-726. (Pubitemid 32370950)
    • (2000) Technical Digest - International Electron Devices Meeting , pp. 723-726
    • Kim, S.D.1    Park, C.-M.2    Woo, J.C.S.3
  • 4
    • 0032099279 scopus 로고    scopus 로고
    • Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET's
    • PII S0018938398036739
    • S. Biesemans, M. Hendriks, S. Kubicek, and K. De Meyer, "Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFETs," IEEE Trans. Electron Devices, vol. 45, no. 6, pp. 1310-1316, Jun. 1998. (Pubitemid 128736630)
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.6 , pp. 1310-1316
    • Biesemans, S.1    Hendriks, M.2    Kubicek, S.3    De Meyer, K.4
  • 6
    • 0023570547 scopus 로고
    • Gate-voltage-dependent effective channel length and series resistance of LDD MOSFETs
    • Dec.
    • G. J. Hu, C. Chang, and Y. T. Chia, "Gate-voltage-dependent effective channel length and series resistance of LDD MOSFETs," IEEE Trans. Electron Devices, vol. ED-34, no. 12, pp. 2469-2475, Dec. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.12 , pp. 2469-2475
    • Hu, G.J.1    Chang, C.2    Chia, Y.T.3
  • 8
    • 0018468995 scopus 로고
    • New method to determine effective mosfet channel length
    • K. Terada and H. Muta, "New method to determine effective MOSFET channel length," Jpn. J. Appl. Phys., vol. 18, pp. 953-959, 1979. (Pubitemid 10406186)
    • (1979) Japanese journal of applied physics , vol.18 , Issue.5 , pp. 953-959
    • Terada Kazuo1    Muta Hiroki2
  • 9
    • 36549017106 scopus 로고    scopus 로고
    • A constant-mobility method to enable MOSFET series-resistance extraction
    • Dec.
    • D. W. Lin, M. L. Cheng, S. W. Wang, C. C. Wu, and M. J. Chen, "A constant-mobility method to enable MOSFET series-resistance extraction," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1132-1134, Dec. 2007.
    • (2007) IEEE Electron Device Lett , vol.28 , Issue.12 , pp. 1132-1134
    • Lin, D.W.1    Cheng, M.L.2    Wang, S.W.3    Wu, C.C.4    Chen, M.J.5
  • 10
    • 77950298597 scopus 로고    scopus 로고
    • A novel method of MOSFET series resistance extraction featuring constant mobility criteria and mobility universality
    • Apr.
    • D.W. Lin, M. L. Cheng, S.W.Wang, C. C.Wu, and M. J. Chen, "A novel method of MOSFET series resistance extraction featuring constant mobility criteria and mobility universality," IEEE Trans. Electron Devices, vol. 57, no. 4, pp. 890-897, Apr. 2010.
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.4 , pp. 890-897
    • Lin, D.W.1    Cheng, M.L.2    Wang, S.W.3    Wu, C.4    Chen, M.J.5
  • 12
    • 0030241665 scopus 로고    scopus 로고
    • A novel technique to determine the gate and drain bias dependent series resistance in drain engineered MOSFET's using one single device
    • PII S0018938396064453
    • J. A. M. Otten and F. M. Klaassen, "A novel technique to determine the gate and drain bias dependent series resistance in drain engineered MOSFETs using one single device," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1478-1488, Sep. 1996. (Pubitemid 126770457)
    • (1996) IEEE Transactions on Electron Devices , vol.43 , Issue.9 , pp. 1478-1488
    • Otten, J.A.M.1    Klaassen, F.M.2
  • 13
    • 68349130473 scopus 로고    scopus 로고
    • A simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters
    • Aug.
    • A. Khakifirooz, O. M. Nayfeh, and D. Antoniadis, "A simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters," IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1674-1680, Aug. 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.8 , pp. 1674-1680
    • Khakifirooz, A.1    Nayfeh, O.M.2    Antoniadis, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.