|
Volumn 379, Issue 36, 2015, Pages 1946-1950
|
Influences of defects and Sb valence states on the temperature dependent conductivity of Sb doped SnO2 thin films
|
Author keywords
Doping; Electrical conductivity; Positron annihilation; Thin film; Valence state
|
Indexed keywords
ANTIMONY COMPOUNDS;
CALCINATION;
DOPING (ADDITIVES);
GRAIN BOUNDARIES;
NANOCOMPOSITES;
OXIDE FILMS;
POSITRON ANNIHILATION;
POSITRONS;
SEMICONDUCTOR DOPING;
TIN OXIDES;
ANTIMONY DOPED TIN OXIDES (ATO);
ELECTRICAL CONDUCTIVITY;
POSITRON ANNIHILATION PARAMETERS;
SB-DOPED SNO2;
TEMPERATURE-DEPENDENT CONDUCTIVITY;
VACANCY CLUSTER;
VALENCE STATE;
THIN FILMS;
|
EID: 84937638659
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physleta.2015.06.033 Document Type: Article |
Times cited : (21)
|
References (37)
|